2SC3852A ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor 2SC3852A
DESCRIPTION
- Collector-EmitterBreakdown Voltage- :V(BR)CEO=80V(Min)
- DCCurrentGain- :hFE= 200(Min)@IC=0.5A
APPLICATIONS
- Driverforsolenoid andmotor,series regulatorand generalpurpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 100 V VCEO Collector-EmitterVoltage 80 V VEBO Emitter-BaseVoltage 6 V IC CollectorCurrent-Continuous 3 A IB BaseCurrent-Continuous 1 A PC CollectorPowerDissipation @TC=25℃ 25 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor 2SC3852A ELECTRICALCHARACTERISTICS Tj=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=25mA;IB=0 80 V VCE(sat) Collector-EmitterSaturationVoltage IC=2A;IB=50mA 0.5 V ICBO CollectorCutoffCurrent VCB=100V;IE=0 10 μA IEBO EmitterCutoffCurrent VEB=6V;IC=0 10 μA hFE DCCurrentGain IC=0.5A;VCE=4V 400 COB OutputCapacitance IE=0;VCB=10V;f=1MHz 50 pF fT Current-Gain—BandwidthProduct IE=-0.2A;VCE=12V 15 MHz SwitchingTimes ton Turn-OnTime IC=1A;IB1=15mA;IB2=-30mA; VCC=20V;RL=20Ω 0.8 μs tstg StorageTime 3.0 μs tf FallTime 1.2 μs