2SC3833 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3833
DESCRIPTION
- High Collector-Emitter Breakdown Voltage- : V (BR)CEO= 400V(Min)
- High Switching Speed
- High Reliability
APPLICATIONS
- Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 24 A IB B Base Current-Continuous 4 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3833
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A B 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.4A B 1.3 V ICBO Collector Cutoff Current VCB= 500V ; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 0.1 mA hFE DC Current Gain IC= 7A ; VCE= 4V 10 30 COB Output Capacitance IE= 0 ; VCB= 10V; ftest= 1.0MHz 105 pF fT Current-Gain—Bandwidth Product IE= -1A ; VCE= 12V 10 MHz Switching Times ton Turn-on Time 1.0 μs tstg Storage Time 3.0 μs tf Fall Time IC= 7A,IB1= 0.7A; IB2= -1.4A RL= 28.5Ω; VCC= 200V 0.5 μs isc Website：www.iscsemi.cn 2