2SC3832 SANKEN
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Technical content
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor)Application : Switching Regulator and General Purpose Symbol VCBO VCEO VEBO IC IB PC Tj T stg 2SC3832 500 400 Pulse14) 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W n Absolute maximum ratings n Electrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB 2SC3832 100max 100max 400min 10to30 0.5max 1.3max 10typ 50typ Unit mA mA V V V MHz pF Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=–0.5A VCB=10V, f=1MHz 2SC3832 (Ta=25°C) (Ta=25°C) IC –V CE Characteristics (Typical) h FE –IC Characteristics (Typical) ton •tstg•tf–IC Characteristics (Typical) θj-a–t Characteristics IC –V BE Temperature Characteristics (Typical)V CE (sat),VBE (sat)–IC Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage VCE(sat) (V) Base-Emitter Saturation Voltage V BE(sat) (V) Pc –Ta DeratingReverse Bias Safe Operating AreaSafe Operating Area (Single Pulse) 213 4 Collector-Emitter Voltage VCE (V) Collector Current IC (A) 400mA 300mA 600mA 800mA 200mA IB =100mA 0.02 0.10.05 1 5 0.5 7 (IC /IB =5) Collector Current IC (A) V BE (sat) 125˚C (Case Temp) 25˚C (Case Temp) –55˚C (Case Temp) 25˚C –55˚CV CE (sat) 125˚C (CaseTem 0.2 1 0.5 5 0.1 0.5 Switching Time ton•tstg•tf(µ s) Collector Current IC (A) tstg ton tf V CC 200V IC :IB1 :–IB2 =10:1:2 0.3 0.5 1 10 100 1000 Time t(ms) Transient Thermal Resistance θj-a(˚C/W) 00 25 50 75 100 125 150 Ambient Temperature Ta(˚C) Maximum Power Dissipation P C (W) With Infinite heatsink Without Heatsink 10 505 500 100 0.5 0.1 Collector-Emitter Voltage VCE (V) Collector Current IC (A) Without Heatsink Natural Cooling L=3mH B2=1A Duty:less than 1% 10 505 100 500 0.5 0.1 Collector-Emitter Voltage VCE (V) Collector Current IC (A) Without Heatsink Natural Cooling 100 µs Base-Emittor Voltage V BE (V) Collector Current IC (A) (VCE =4V) 125˚C (Case Temp)25˚C (Case Temp) –55˚C (Case Temp) 0.02 0.10.05 1 7 50.5 Collector Current IC (A) DC Current Gain h FE (VCE =4V) 125˚C 25˚C –30˚C n Typical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω ) 66.7 IC (A) VBB2 (V) IB2 (A) –0.6 ton (ms) 1max tstg (ms) 3max tf (ms) 0.5max IB1 (A) 0.3 VBB1 (V) External DimensionsMT-25(TO220) BE 2.5 2.5 C 16.0±0.712.0min 4.0max 8.8±0.2 1.35 0.65+0.2 -0.1 10.2±0.2 ø3.75±0.2 3.0±0.2 4.8±0.2 1.4 2.0±0.1 a b Weight : Approx 2.6g a. Type No. b. Lot No.