2SC3831 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3831
DESCRIPTION
- With TO-3PN package
- High voltage
- High speed switching
APPLICATIONS
- For switching regulator and general purpose applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 10 A ICP Collector current-pulse 20 A IB Base current 4 A PC Collector power dissipation TC=25℃ 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3PN) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3831 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=25mA; IB=0 500 V VCEsat Collector-emitter saturation voltage I C=5A IB=1.0A 0.5 V VBEsat Base-emitter saturation voltage I C=5A ;IB=1.0A 1.3 V ICBO Collector cut-off current V CB=600V; IE=0 1 mA IEBO Emitter cut-off current V EB=10V; IC=0 0.1 mA hFE DC current gain I C=5A ; VCE=4V 10 30 fT Transition frequency I C=1A ; VCE=12V 8 MHz COB Output capacitance f=1MHz ; V CB=10V 105 pF Switching times ton Turn-on time 1.0 μs tstg Storage time 4.5 μs tf Fall time IC=5A; VCC=200V IB1=0.5A; IB2=-1A RL=40Ω 0.5 μs
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3831 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3831