2SC3830 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3830 DESCRIPTION ·
- With TO-220C package
- High voltage
- High speed switching
APPLICATIONS
- For switching regulator and general purpose applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 6 A ICM Collector current-peak 12 A IB Base current 2 A PC Collector dissipation TC=25℃ 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3830 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=25mA ; IB=0 500 V VCEsat Collector-emitter saturation voltage I C=2A; IB=0.4A 0.5 V VBEsat Base-emitter saturation voltage I C=2A; IB=0.4A 1.3 V ICBO Collector cut-off current V CB=600V ;IE=0 1 mA IEBO Emitter cut-off current V EB=10V; IC=0 100 μA hFE DC current gain I C=2A ; VCE=4V 10 30 fT Transition frequency I C=0.5A ; VCE=12V 8 MHz COB Output capacitance f=1MHz ; V CB=10V 45 pF Switching times ton Turn-on time 1.0 μs tstg Storage time 4.5 μs tf Fall time VCC=200V; IC=2A IB1=0.2A; IB2=-0.4A; RL=100Ω 0.5 μs
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3830 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3830