2SC3829

2SC3829 PANASONIC

Document overview

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Technical content

Silicon NPN epitaxial planer type For UHF band low-noise amplification n Features l Low noise figure NF. l High gain. l High transition frequency fT. l Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package 2.8 +0.2 –0.3 1.5 +0.25 –0.05 0.950.95 1.9–0.2 0.4 +0.1 –0.05 1.1 +0.2 –0.10.8 0.4–0.2 0 to 0.1 0.16 +0.1 –0.06 1.45 0.1 to 0.3 2.9 +0.2 –0.05 Symbol V CBO V CEO V EBO IC PC Tj Tstg Ratings 200 150 –55 ~ +150 Unit V V V mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Maximum unilateral power gain Noise figure Symbol I CBO IEBO V CBO V CEO hFE fT C ob | S21e |2 GUM NF Conditions V CB = 10V , IE = 0 V EB = 2V , IC = 0 IC = 10mA, IE = 0 IC = 100mA, IB = 0 V CE = 8V , IC = 20mA V CE = 8V , IC = 20mA, f = 800MHz V CB = 10V , IE = 0, f = 1MHz V CE = 8V , IC = 20mA, f = 800MHz V CE = 8V , IC = 20mA, f = 800MHz V CE = 8V , IC = 20mA, f = 800MHz min typ 150 0.7 13.5 max 300 1.2 Unit mA mA V V GHz pF dB dB dB Marking symbol :3M

PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IC C ob — V CB GUM — I C NF — IC 0 160 40 120 80 14020 100 60 240 200 160 120 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 2 10826 4 Ta=25˚C 180mA 160mA 140mA 120mA 100mA 80mA 60mA 40mA 20mA IB=200mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 120 100 VCE =8V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 IC /IB=10

Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 600 500 400 300 200 100 VCE =8V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 0.1 1 10 1000.3 3 30 VCE =8V f=800MHz Ta=25˚C Collector current IC (mA ) Transition frequency fT (GHz ) 0.1 1 10 1000.3 3 30 2.4 2.0 1.6 1.2 0.8 0.4 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) Collector current IC (mA ) Noise figure NF (dB) 0.1 10 100 10000.3 3 300 VCE =8V (Rg=50W ) f=800MHz Ta=25˚C 0.1 1 10 1000.3 3 30 VCE =8V f=800MHz Ta=25˚C Collector current IC (mA ) Maximum unilateral power gain GUM (dB)