2SC3795 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3795 2SC3795A
DESCRIPTION
- ·With TO-220Fa package
- High breakdown voltage
- High speed switching
- Low collector saturation voltage
APPLICATIONS
- For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC3795 800 VCBO Collector-base voltage 2SC3795A Open emitter 900 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 8 V IC Collector current (DC) 5 A ICM Collector current-Peak 10 A IB Base current 3 A TC=25 40 PC Collector power dissipation Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220Fa) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3795 2SC3795A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=0.2A , L=25mH 500 V VCEsat Collector-emitter saturation voltage I C=3A; IB=0.6A 1.0 V VBEsat Base-emitter saturation voltage I C=3A ;IB=0.6A 1.5 V 2SC3795 V CB=800V; IE=0 ICBO Collector cut-off current 2SC3795A V CB=900V; IE=0 0.1 mA IEBO Emitter cut-off current V EB=5V; IC=0 0.1 mA hFE-1 DC current gain I C=0.1A ; VCE=5V 15 hFE-2 DC current gain I C=3A ; VCE=5V 8 fT Transition frequency I C=0.5A ; VCE=10V 8 MHz Switching times 2SC3795 1.0 ton Turn-on time 2SC3795A 1.2 µs ts Storage time 3.0 µs 2SC3795 1.0 tf Fall time 2SC3795A IC=3A; IB1=- IB2=0.6A VCC=200V 1.2 µs
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3795 2SC3795A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3795 2SC3795A