2SC3795 PANASONIC

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2SC3795, 2SC3795A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching n Features l High-speed switching l High collector to base voltage VCBO l Low collector to emitter saturation voltage VCE(sat) l Full-pack package which can be installed to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CES V CEO V EBO ICP IC IB PC Tj Tstg Ratings 800 900 800 900 500 150 –55 to +150 Unit V V V V A A A W 2SC3795 2SC3795A 2SC3795 2SC3795A TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO IEBO V CEO(sus)* hFE1 hFE2 V CE(sat) V BE(sat) fT ton tstg tf Conditions V CB = 800V, IE = 0 V CB = 900V, IE = 0 V EB = 5V , IC = 0 IC = 0.2A, L = 25mH V CE = 5V , IC = 0.1A V CE = 5V , IC = 3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A V CE = 10V , IC = 0.5A, f = 1MHz IC = 3A, IB1 = 0.6A, IB2 = – 0.6A, V CC = 200V min 500 typ max 100 100 100 1.5 1.2 1.2 Unit mA mA V V V MHz ms ms ms 2SC3795 2SC3795A 2SC3795 2SC3795A 2SC3795 2SC3795A Unit: mm 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0–0.2 5.5–0.2 7.5–0.2 16.7–0.3 0.7–0.1 14.0–0.5 Solder Dip 4.0 0.5 +0.2 –0.1 1.4–0.1 1.3–0.2 0.8–0.1 2.54–0.25 5.08–0.5 213 2.7–0.2 4.2–0.2 4.2–0.2 f3.1–0.1 *V CEO(sus) Test circuit X L 25mH 15V1W Y G 120W 50/60Hz mercury relay

Power Transistors 2SC3795, 2SC3795A PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I C C ob —V CB ton, tstg, tf — IC Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 (1) (3) (2) (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) Without heat sink (PC =2.0W) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 0 826 4 TC =25˚C 50mA 20mA 100mA 150mA 200mA 300mA 400mA 600mA 800mA 1000mA IB=1200mA Collector to emitter voltage VCE (V) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 100 IC /IB=5 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 100 IC /IB=5 25˚C 100˚C TC =–25˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.1 0.3 100 300 1000 TC =100˚C 25˚C –25˚C VCE =5V Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 0.1 0.3 100 300 1000 VCE =10V f=1MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 0.1 1 10 1000.3 3 30 100 300 1000 3000 10000 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 08 26 4715 3 0.01 0.03 0.1 0.3 100 tstg tf ton Pulsed tw =1ms Duty cycle=1% I C /IB=5 (IB1=–IB2) VCC =200V TC =25˚C Collector current IC (A) Switching time ton,tstg,tf (ms) 1 10 100 10003 30 300 0.003 0.01 0.03 0.1 0.3 Non repetitive pulse TC =25˚C ICP 10ms 1ms t=0.5ms DC IC 2SC3795/2SC3795A Collector to emitter voltage VCE (V) Collector current IC (A)

Power Transistors 2SC3795, 2SC3795A Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 0.1 100 1000 (1) (2) (1) PT=10V · 0.2A (2W) and without heat sink (2) PT=10V · 1.0A (10W) and with a 100 · 100 · 2mm Al heat sink Time t (s) Thermal resistance Rth(t) (˚C/W) 0 800 200 600 400 700100 500 300 2SC3795 2SC3795A Lcoil=50µH IC /IB=5 (IB1=–IB2) TC =100˚C Collector to emitter voltage VCE (V) Collector current IC (A) L coil ICIB1 Vin tW –IB2 Vclamp VCC T.U.T