2SC3792 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
+ Adoption of FBET process + High DC current. gain + High Vago (Vppo225V) . High reverse Fee (150 typ.) + Small ON resistance [Ron=10 (1g=5mA)) Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Vepo 50 v Collector to Emitter Voltage Vero 20 Vv Emitter to Base Voltage Vepo 25 v Collector Current Ig 500 mA - Collector Current(Pulse) Igp 800 mA Base Current Ih 100 mA Collector Dissipation Po 500 «ow Junction Temperature Tj 150% Storage Temperature Tstg -55 to +150 % Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current I¢gq — Vop=40V,Iy=0 0.1 pA Emitter Cutoff Current IzB0 Vpp=20V,Ig=0 0.1 pA DC Current Gain hep Vogt5V,IQ=10mA 300 1200 Gain-Bandwidth Product fy Voge 10V,Ig=10mA 250 MHz Output Capacitance Sop Voge 10V, f= IMHz 4.0 pF Collector to Emitter Vor(sat) I= 100mA ,Ip=2mA 0.12 0.5 v Saturation Voltage Base to Emitter Saturation Vpe(sat) I=100mA ,I,=2mA 0.85 1.2 Vv Voltage Collector to Base Vv CBO Ig= 10 A, Ip=0 50 Vv Breakdown Voltage (BR) Collector to Emitter v, CEO I= ima, R 200 20 Vv Breakdown Voltage (BR) . BE Emitter to Base Breakdown V(BR)EBO Ig=10/A,Ip=0 25 Vv Voltage Package Dimensions 2003A (unit: mm ) one 045 tt TH Fs] =< | bons c | $.0—>p-— 14.0 4.0: JEDEC: TO-92 B. Base EIAJ : SC-43 Cc. Collector . SANYO: NP E. Emitter SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE. Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 6140MO/5127KU/N295KI,TS No.1858-1/3
200 Hs > VCE 20 I¢ - Vee
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8 oper) ee Bhool TTT Ti ea "Collector Current ,Ig - mA , 10" colléotor Current ,Ig’~ mA - No. 1858-2/3
PAA. SSS CO i NTE Re CNT TT, PRS a*C TRIPLE LL Sol tt] | Rear INN] 8 3100 Lo, q PSS Po se Ne Pees 8 iT SN 8 See ees ey LETT PRR, FE 310 ae | % 10 a ee z= 4 5 Sp tt it tt it 3 i LIT Pr OD jn a1 3 10 2 3 70 rr oe 379 3 Base Current ,I, - mA Coliector to Emitter Voltage, Vor -Vv eo Pc - Ta 500 + eCUN TT a IN EEN > coo) | : Nan aw gL LEN | 8 100 ia & NX . Bo SS ° 20 40 60 8 WM 120 140 160 Ambient Temperature,Ta - °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. W@ Anyone purchasing any products described or contained herein for an above-mentioned use shall: , ©® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information (including circuit diagrams and cirouit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no Suarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No. 1858-373 ?