2SC3789 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc Website：www.iscsemi.cn isc Silicon NPN Power Transistor 2SC3789
DESCRIPTION
- High Collector-Emitter Breakdown Voltage- : V (BR)CEO = 300V(Min)
- Complement to Type 2SA1479
APPLICATIONS
- High-definition CRT display.
- Color TV chroma output, high breakdown voltage drivers. ABSOLUTE MAXIMUM RATINGS(T a =25 SYMBOL PARAMETER VALUE UNIT V CBO Collector-Base V oltage 300 V V CEO Collector-Emitter V oltage 300 V V EBO Emitter-Base Voltage 5 V I C Collector Current-Continuous 0.1 A I CM Collector Current-Peak 0.2 A P C Collector Power Dissipation @ T C =25℃ 7 W Collector Power Dissipation @ T a =25℃ 1.5 T J Junction Temperature 150 ℃ T stg Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn isc Silicon NPN Power Transistor 2SC3789
ELECTRICAL CHARACTERISTICS
T C =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT V (BR)CBO Collector-Base Breakdown V oltage I C = 10μA; I E = 0 300 V V (BR)CEO Collector-Emitter Breakdown Voltage I C = 1mA; R BE = ∞ 300 V V (BR)EBO Emitter-Base Breakdown Vltage I E = 10μA; I C = 0 5 V V CE( sat Collector-Emitter Saturation Voltage I C = 20mA; I B = 2mA 0.6 V V BE( sat Base-Emitter Saturation Voltage I C = 20mA; I B = 2mA 1.0 V I CBO Collector Cutoff Current V CB = 200V; I E = 0 0.1 μA I EBO Emitter Cutoff Current V EB = 4V; I C = 0 0.1 μA h FE DC Current Gain I C = 10mA; V CE = 10V 40 320 f T Current-Gain—Bandwidth Product I C = 10mA; V CE = 30V 70 MHz C OB Output Capacitance I E = 0; V CB = 30V, f test = 1MHz 2.6 pF h FE Classifications C D E F 40-80 60-120 100-200 160-320