2SA1479 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Features
+ High breakdown voltage (V¢go2300V) - Excellent high frequency characteristic (c= 1-8pF(typ)) « Adoption of MBIT process + No insulator required for mounting, which contributes to reducing the cost and the number of manufacturing processes. . - Plastic-covered heat sink facilitating high-density mounting . Directly interchange able with TO-126 because the package is designed based on the conventional package dimensions ( ): 2SA1479 Absolute Maximum Ratings at Ta=25°C- unit Collector. to-Base Voltage Vopo (-)300 Vv Collector-to-Emitter Voltage V¢go (-)300 v Emitter-to-Base Voltage Vepo (-)5 v Collector Current Ic (-)100 ma Peak Collector Current top (-)200 mA Collector Dissipation Po 1.5 W Te=25°C 7 OW Junction Temperature Tj 150 % Storage Temperature Tstg -55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Ipgo Vopz(-)200V,I,=0 (-)0.1 9 pA Emitter Cutoff Current Tr Vep=(-)4V,Ip=0 (-)0.1 0 pA DC Current Gain bpp Voge (~)10V,2p=(-)10mA —40# 320" Gain-Bandwidth Product fp Vog= (-)30V, Ig=(~) 10mA 70 MHz C-E Saturation Voltage Vor(sat) Ic=(-)20mA,In=(-) 2ma (-)0.6 v B-E Saturation Voltage = Vpp(sat) Ic=(-)20mA,Ig=(~)2ma (-)1.0 Vv Continued on ‘next page. Package Dimensions 2042A (unit: mm) 11.0 15.5 17 1.6, 152 TT 2Fb 5 g Sa i
3 Poa
oF e} ale 2 ge z i B: Base a 5 C: Collector
6 E: Emitter
: SANYO: TO126ML SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN: - 4OB7TA,TS No.2093-1/4
Continued from preceding page. - (~)10pA,I,=0 ( 1300 “yp mes ne c-1 akdown Vol y Ip=(- = - C-E Breakdown Voltage yen ee en eee (3e0 v ; E-B Breakdown Voltage V(BR)EBO The(-) t0pA, Pe=0 (-)5 v Output Capacitance Cop Vop=(-) 30V, f= IMHz bs) pF 3.1 Cert meanerer Cre Vopz(-) 30V, f= MHz (2's) pF *; The 2SA1479/2SC3789 are classified by 10mA hp, as follows: ko Cc 80 | 60 D 120 [ 100 E 200 [| 160 F 320 -6 - 1c ~ Yee BA Ta79 8 ne nee aot LETT TET) fC] vf | [oun TTT Pate per Le ee el ee 9) eT ea TTT) rr (jee eee Collector. to- Emitter Voltage ,Vog - V Collector. to. Emitter Voltage, Vog - V 2SC3789 ao tl To woh LPT eee) Cee Pele a e |_| ple AC Eee Lt) gee TTT Cee Caer POSE perce gaeerTTrTTtTi | 3 aaa a ALP ees TT | ° Bary =60 =120 =160 [xO 0 “0 Ea 120 760 200 Collector-to-Emitter Voltage ,Vop -Vv Collector. to Emitter Voltage, Von -v : Ic - VBE Ic - VBE : 7 ‘ * - in
2 J |) oe) PT
é i a °5 0.2 04 “06 -08 10 0 0 0.2 04 0.6 08 BKe} Base“to- Emitter Voltage, Vgp ~.V Base-to- Emitter Voltage Vpp~ V No. 2093-2/4
- 2SA1479/2SC3789 ne er a oe ECP eLiLUT TriTy |] eit PE ty ST a 4 ee 3 poe AT 8 gL) 250 i ee ee ee ee BTCC ENE ope NS 3 5 Suciieiaite Coo Collector Current, - mA Collector Current,Ig - mA na fr - lc sa fr -Ic & 2841479 & 2803789. il TE per) 8 TTT a a i + = + | at ™N 3 tH ar 2 CO eT NT E PiIN | EUAN a 3 y a 3 a Lk YT] si/4v CL i HL) a a ” g ” an Pr : He 3 tH ne ee ee T3090. 2 3 5S 7-0 2 39 5 7-00 2 40 «2 0 2 3 TIO 2 Collector Current,Ig - mA Collector Current,Ig - mA -V -¥ .3 Sob _- Yep = 2 Cob = VeR — OO) CO ' 40 1 10 8 oN fH ei |) TTT Titi
7 SS So g FS
° 8 ea TT) B 2 zg Pr rr 5 pr OO Oe 10 2 3 5 T249 3 5 7.400 2 1.0 3S 7 © 23° 5 7199 2 Collector-to-Base Voltage ,Vog - V Collector. to-Base Voltage,Von = Vo, cre - Vos cre - Vos Sta 2 2SA1479 ~ 2 PSCa7E9 Ss! G1 10 Be KE ee r i_ fp ee St ps, PW gg EER Ea foamae 3 (LL SST i ee eo tt LPL ey 8 ee ee eee & rH ee -10 2 3 S749 2 3 S 7.9 2 mw 2? 3 STH 23 Sim 2 Collector-to- Base Voltage Vey - V Collectof-to-Base Voltage;Vop - Vi, i No. 2093-3/4
beg Vce(sat) ~ Ic ’ 2 Vce(sat) - Ic - A 1 5 7EE EEE Ip/1p=10 8 Ce SF 6 ie /tg= 10 3 = $ rt tit To ei] TPuir Ba RS 5 seo tT OT) 8 Bg - = 1.0 | aeeeces oereey SoM cee eee as 2? 7 a2 3 os ee ae 3 [TT Ty rr] na 8 y aS 20 aa Deana 7 ig
33 Perit | sf Ty er
83 LA 83 os 4
9% -Ot J ro ro 33 > és CU PP rg SCE Pr S749 23 57.49 2 3 5 Taq 2 5740 2 3° 57490 2 3 5 7100 . Collector Current ,Ig ~ mA Collector Current,Ig - mA > 10 Vee(sat) - I¢ ~ 0 Vpe(sat) - I¢ — Bs | [| oo 3 (4 Py : gi TTT TT : if arse g a = an eo ree Pe g 23 -10- BE 1.0 ——— Pen ee ne ee —q r Ls Deg _ Att ee PTT a8 LTE ge LU Ti Ta os es 3] ap 3 aS a Alt Ty TP S70 2 3 S749 2 3 S Tao S749 2 3 57 40 3 00 Collector Current ,Ig - mA Collector Current ,I¢ - pA . Pc - Ta 3 A.S.0 gs ee ae ee 4 ap tee TTT Paar ps0 IONE tate RST a 6 r | ef NT y YX a Xe, Ss s |] CNN a NK . 5 ry | a 6 NAY 5 a Bgl o> 5 ety Sd 8 2a, ca | Pe, DEAN f° | | | 84 eS 8 %0 ch i" SSNS esse ee go? No teat si | oN |_| a CEP Te Sa a Py oe NN j[ (For PNP, minus sign is omitted.)[ | SD ee ee a5 =—3 700 5 . Ambient Temperature,Ta - °C Collector-to- Emitter Voltage, Vg - V) WH No products descrived or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicies, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. ME Anyone purchasing any products described or contained herein for an above-mentioned use shalt ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and fitigation and all damages, cost and expenses associated with such use: - ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTO.,, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- - eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, ' ee No. 2093-4/4