2SA1477 SANYO
Document overview
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Technical content
Features
- Adoption of FBET process. - Excellent linearity of hpg. - Small Cob. + Plastic-covered heat sink facilitating high-density mounting (TO126ML package). ( ):28A1477 Absolute Maximum Ratings at Ta = 25°C unit Collector-to-Base Voltage Voso (—)180 Vv Collector-to-Emitter Voltage Voro (—)160 Vv Emitter-to-Base Voltage VeEBo (-)5 v Collector Current Ic (-)140 mA Collector Current (Pulse) Iop (—)200 mA Collector Dissipation Po 1.3 Ww Te=25°C 10 Ww Junction Temperature Tj 150 °c Storage Temperature Tstg —55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Icpo Vop=(—)120V, Ip=0 (-—)100 nA Emitter Cutoff Current IEgo. Vep=(—)4V,Ig=0 (-)100 nA DC Current Gain hr Vee=(—)5V, Ic=(—)10mA 100 400 Gain Bandwidth Product fp Vor=(—)10V, Io¢=(—)L0mA 150 MHz Output Capacitance Cob Vop=(—)10V, f=1MHz (4,0) pF 3.0 pF C-E Saturation Voltage Verisat) Ic¢=(—)50mA, Ip=(—)5mA (—140)(—400) mV 70 300 mV B-E Saturation Voltage Vexisat) Io=(—)50mA, Ip=(—)5mA 12 V C-B Breakdown Voltage Viarycpo Io=(—)10nA, Ip=0 (-)180 Vv C-E Breakdown Voltage Vesryceo Ic=(—)1mA, Rgp= (—)160 Vv E-B Breakdown Voltage VipreBo Ip=(—)10pA, Ic=0 (-)5 Vv Rise Time ton See specified Test Circuit. 0.1 us Storage Time tatg a 15 us Fall Time te 4 0.1 us > : The 25A1477/2SC3787 are classified by 10mA hrg as follows: Package Dimensions 2042B it: 140s 280 | 200 T _400 ess one . Par 2 3.0 y Switching Time Test Circuit = 7 SEs PWe 26 lel our f 2Fs ay SUE ke > ° S ae 3 at aan 2 ze a if 7 oF a} ae i H 4 Ig=10Ig1=10Ig2=10mA al gs a | de Rt | ForPNP,thepolarityis = of [TP] fe I Eritter Sy Sy reversed. gf 2 Collector 6] 8: Base Unit (Resistance : 2, Capacitance : F) SANYO: TO126ML SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 10996TS (KOTO) 8-8491/5197TA, TS No.2089-1/4
SS -SOk(77 -9E=S R | LE ee 2 eee ea : = Sn 0 ee ee “1 Lo nee | © “Gallectorto-Emitter ValtageVeg —¥ © Collector to-Enitter Voltage Vee ~V
1 Ic = VBE 160 Ic — Vee
LLL | [TTT ee Voe=— 140 Cee ~ nm" eee Petite BH CEO COCA pel TT E ol HH | _— sti Tt Ey ee ee PTET) af ty ane ee Pei) &, Ly pe oO - if 20 LLL A Lett AA Base-to-Emitter Voltage,Vp ~ V Base-to-Emitter Voltage, Vpp — V bre — Ie 1000 bre — Ic 1000 2803787 HH tf cee Poe > Thoth £ Ha fe ee. Se a SSN i Feet ll See aN pc SSermeee Sas Saat ener ee 3 2 CCN g iP Tritt 3 J alt (TTT | ‘100 0 1.0 10 735s 100 Collector Current,Ig — mA Collector Current,[g ~ mA fc 4 = tc 2803787 ' ween LTE » J TTT TT wl os | ey ae omen Oe s Letty | san ya ne oe a é J, it tty Try é oe . 3 See i tH el] UL I] eg] yi aT | a oO oO 10) 1 10 vee Collecar Current le — mA “tee re Collector Current — mA 00 Fe ee N0.2089-2/4
100 Cob — Veep 100 Cob — Veg
a}, [tT TTT TT it) 2g] Ti pry rrr 8 ry Pee eee gy, 1] [tt Te ee a Oe & g——top—Lif[ ft tt | é SO ge, 0) Toe i) gg Pe & ERP aq] |) Pee org 7 5 7 30 a =100 1 nai ti Collector-to-Base Voltage, Von — V Collector-to-Base Voltage, Vcp — V Vee(at) — Ie Vee(sat) — Ic -10000 10000 se ee 28A1477 es 28C3787 > ite > Qo Ioflg=10 e jt ity Ty e jt titi | i [I Avot [i itt Ti tit Ty ge POR gs ee id id a a a Hae OO BT 33 lent peer rrr) 23 a 2 a 8a ee eH 66 =r om a Hy yl pet Collector Current,Ig — mA Collector Current,Ig — mA. Veg(sat) — !c Vee(sat) — Ic -10 10 Pp} ete Hite > tt oT yy yy ae ee STOTT ee g 4 & 4 Pe 52 BU Be ag === ann A a= $3 Sa $3 SS is ani met] || (iT [| 38 yee eee ie Ce 5 1.0 =0 400 7.0 10 3 100 3 Collector Current,Ig — mA Collector Current,lg — mA. Pc — Ta Po — Te RCE EES) OE oo e . 10) ba ENE TTT EIN TET ar I 6 IN pf TTR TT gs \\ S os 3 N eat | | [| mT TFs SCC NE 5 54 BCCorceestg aL NN BEELER PCCP NS % 20 40 60 8 «10 120 160 % 20 40 60 80 yO «120 160 Ambient Temperature, Ta — °C Case Temperature,Tc — °C No.2089-3/4
L |] 28A1477/2SC3787 <« po | Ty | & Tce] T ‘100 Ee . INA oe ee [| Qe J PP Ne, a ee 5 “a, gfii Pe TNT eit T TP APTN soi) |) NIT 10 iS Ta= 25°C a a {single pulse | [| 7 J] 10 100 Collector-to-Emitter Voltage, Vcp — V I No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power contro! systems, vehicles, disaster/crime-prevention equipment and the like, the: failure of which may directly or indirectly cause injury, death or property loss. WM Anyone purchasing any products described or contained herein for an above-mentioned use shall: © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and alt claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. WW Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees ate made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 1996, Specifications and information herein are subject to change without notice, No.2089-4/4