2SC3784 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
. High DC current gain » Wide ASO . On-chip zener diode of 60410V between collector and base + Uniformity in collector to base breakdown voltage + Large inductive load handling capability Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Yopo *50 Vv Collector to Emitter Voltage Vero #50 v Emitter to Base Voltage Vepo - 6 Vv Collector Current Ie 1.2 A Peak Collector Current dop 2.5 A Collector Dissipation Pc 1.2 W Po Te=25°C 20 OW Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 *; On-chip zener diode (60210V) Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Tezo Vop=40V, 1,=0 10 uA Emitter Cutoff Current TEpo Vpp=5V,1¢=0 10 mA DC Current Gain bpp Vog=5V,Ic=500mA 1000 4000 Gain-Bandwidth Product fy Vop=5V,Ig=500mA 180 MHz | C-E Saturation Voltage Yor(sat) I¢=500mA ,I,=2mA 1.0 1.5 v | B-E Saturation Voltage Vge(sat) I¢=500mA,Ip=2mA 2.0 Vv | Inductive Load E BS L=100mH, Rpp=1000hms 15 nJ | Handling Capability - | C-B Breakdown Voltage Voprycpo Ic=100uA,Ip=0 50 60 70 Vv C-E Breakdown Voltage VBR) CEO Ig=1mA ; Rpp=co 50 60 70 Vv | Continued on next page. Package Dimensions 20434 . (unit: mm) 11.0 15.5 12 | te 9.0 poole far ed ioe | Silo° Cf === sling | 2.08 28 alg B: Base i ar ae ¢: collector
3 E: Emitter
SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN D251MH/5257TA,TS No.2297-1/3
“ c3784 eS Continued from preceding page. min typ max unit Turn-on Time ton See specified Test Circuit. 0.2 us Storage Time tstg " 2.2 us Fall Time te e 0.4 us Switching Time Test Circuit Es/b Test Circuit Pw=S0us , Duty Cycle 5 1% her tal Lo +Ncc Ye1= lpg = mA Vocr20v,RaEst00n INPUT Ry sw RL » tp Ree 1005 10 Vea" -5V Vec= 20 Unit (resistance: ©, capacitance: F)
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T [erase > tte max| | | A | Fi Nee a i i o %. | E ha a — 4 INA 6 i 2 A . ya} it a Sey, 8 fo PAY g 6 On ' 7) E i | | | | 8 ' i TS & ij 3 Zon if |_| d 4 N NI ee ee 7 tT TT] No heat sink he rt cH 3 tt ‘e 2 40-60 ao Be 1.0 . 10 100 80 Collector to Emitter Voltage, Voy - V Ambient Temperature,Ta - °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. W Anyone purchasing any products described or contained herein for an above-mentioned use shall © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO. LTD, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of 4 their officers and employees jointly or severally. Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding iis use or any infringements of intellectual property rights or other rights of third parties. No.2297 —3/3