2SA1475 SANYO

Document overview

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Technical content

Features

~ . High fp (fp typ=500MHz) . High breakdown voltage (Veg? 120¥) ~ + Small reverse transfer capacitance and excellent HF response (Cre=2.6pF(NPN), 3.9pF(PNP)) » Complementary PNP and NPN types + Adoption of FBET process ( ):28A1475 Absolute Maximum Ratings at Ta=25°C unit Collector.to. Base Voltage Vopo (-)120 v Collector-to-Emitter Voltage Vero (-)120 v Emitter-to-Base Voltage VERO (-)4 v Collector Current Ic (-)400 mA Peak Collector Current dop (-)600 mA Collector Dissipation Po 1.5 W Te=50°C 15 OW Junction Temperature Tj 150 °% Storage Temperature Tstg -55 to 150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Topo Vop=(-)80V, Ip=0 (-)0.1 pA Emitter Cutoff Current Tap Vep=(-)2V,I¢=0 (+)1.0 pA DC Current Gain hentt) Voge(-) 10V,Ip=(-)50mA 40 3208 hpp(2) Voge (-)10V,Ip=(~)250mA 20 Gain-Bandwidth Product fp Vop=(-) 10V,I¢=(-)50mA 500 MHz Collector to Emitter Vog(sat) Ic=(-)70mA, Ig=(-)7mA 0.6 Vv Saturation Voltage (-0.8) Vv Continued on next page. *:The 2SA1475/2SC3781 are classified by 50mA tpg as follows: HO C80 60 D120) Package Dimensions 2010A : (unit: mm ) 2 100 E 200 {| 160 F 320 fet . tu =P Toes 8 te oe 13 wy 7 E: Emitter "eter C: Collecter SI sepec: To-220aB Br Base : EIAJ: SC-46 SANYO Electric Co.,Ltd. Semiconductor Business Headquarters : TOKYO OFFICE Tokyo Bidg., 1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN . 6200MO/3267AT,TS No.2527-1/4

: 2SA1475/2SC3781 — = oe (-)1. on =(—) 7 mA Continued from preceding pee x oat) Ige(-)10mt Jp 7 Base to Emitter Saturati BE cones ous Ig=(-) 10pA, Tg= Collector-to- Base Breakdown VBR) CBO Cc a oe , ; =(~) IMA, Reps Voltage Emitter Vopr)ceo Ic=(~) mA, Rpg i : see scor to; Emit T_x(-) 100pA, 920 Breakdown Vo: Sreakdown Veanyen0 . a : Emitter_to_Base Bri “nov gene pate ‘ coat, for oo yen ()30¥, fe Ie : Reverse trenafe Capacitance Che CB Reverse Transfer . a - ay “Eset “CLTTTI ae aaee Zann i Pe tend a Zoaaa Cer 7 uV2=e8 =" 3 tt 4 2 (= Pee eet é 4a te a : Pee o: Zane 3 | es Hf a oe ne Aa C : fa 1 AY Zoe 4 §)7eee ce 3 ih aoe] 8 lh at} ates 8 | _ y "coltector-to-taitter Voltage Veg ~ V . * i) . “constant tie Voltage, Vop . rie _ ES) OT CLT ey 2 | ee ee if} oe IER i TT = i: pf tg, HH sa, | | a HH at nA - ° Ae . a : Al va " -Base-to-Emitter Voltage, Vpe Renee vet hre - Ic Base-to-Emitter Voltage, Vpp -_ = Th PISEES a mamanRlaid =-10V CoE aver : 1 aN : ea Sree in J Liman E HHH my é oa r SCT) eo sate . “4 See SHAS . ao ea Collector Current Ig - coliectoriturrent 3g ~ mA i No.2527-2/4

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ASO : Pc - Ta Litt] 25al4rsi2sc3781 = $—-—] 2S5A1475/2SC3781 e=25' {TN 000] 14) NI at eS ‘ a oe | o IN ° ee | er i s as Sere rt Fy XN] ee oS a ae Re BP. 5 \\ gs Les TT eT 2 6 fq Py NS A % i a ON Ag - etch oSNe LE LIN PEC PN. . SS TT _ 3 {ft SNC &, 7 ©. 4(For PNP, SON] 3.24 ideal radiation; Zz [minus sign is omitted.) N Sy NN 10 10 oO ao wo 60 Ca 100 20 “160 Collector-to-Emittér Voltage,Vop - V Ambient Temperature,Ta ~ °C HINo products described or contained herein are intended for use in surgical implants, life-support systems, . aerospace equipment, nuclear power contro! systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M Anyone purchasing any products described or contained herein for an above-mentioned use shall © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, Subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and ail damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault, or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual Property rights or other rights of third parties, No. 2527-4/4