2SC3778 SANYO
Document overview
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Technical content
No.1951B_ /' 2SC3778 Ss A'VYO NPN Epitaxial Planar Silicon Transistor | UHF Low-Noise Amp, l Wide-Band Amp Applications , Applications | . UHF low-noise amplifieres,wide-band amplifiers ‘Features + Small noise figure: NF=2.2dB typ(f=0.9GHz). « High power gain: MAG=14dB typ(f=0.9GHz). . High cutoff frequency: fp=5.0GHz typ. Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Vozo 20 v Collector to Emitter Voltage Voro 12 v Emitter to Base Voltage Vepo 3 v Collector Current Ig 70 mA Base Current. Ip 30 4 «=omA Collector Dissipation Po 500 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Topo Vop® 12V,1,=0 1.0 pA Emitter Cutoff ‘Current Ippo Vgpt2V,Ig=0 10 4A DC Current Gain bpp Voge 10V, 1 =20mA 4o# 200* Gain-Bandwidth Product fr Voge 10V,I¢=20mA 5.0 ’ GHz Output Capacitance Cop Vgg= 10V, f= 1MHz 0.8 1.1 pF Reverse Transfer Capacitance c. Vope 10V, f= 1MHz 0.5 pF Forward Transfer Gain S8feP Vog=10V,1g=20mA,f=0.9GHz 8 10 4B Maximum Available Power Gain MAG Vog= 10V,I,=20mA, f=0.9GHz 14 dB Noise Figure NF Vog=10V,Ip=5mA, f=0.9GHz, 2.2 4.5 dB See specified Test Circuit. *; The 2SC3778 is classified by 20mA hpg as follows:
60 D 120| 100 E 200
(unit: mm) 20 0.46 O45 II TH 4 ib oat " " [esol — 10 Loo JEDEC: TO-92 Cc. Collector EIAJ : SC-43 E. Emitter SANYO: NP B. Base SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN A : 5318M0/5127K1/0185KI,7S No.1951-1/4
3 ’ ° vB OVvee i S cx 2ka ‘ \\ L2 ee (r- wo CAE Sone ——— S9O0OMHz ci ~SpF c2 ~10pF c3 ~10pF ca ~10pF ch ~10pF Li W=1. 5mm, 125mm strip line L2| W+4mm, |1=25mm strip line L3 0. 5¢, 1=40mm CH} 2t+bead core . No. 1951-2/4 .
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8 CTT TTT Ty TT ee
Base to Emitter Voltage,Vpp -V Collector Current,Ig - aA ft - Ic , Cre,Cob - V TOA Ss AL 7 o et} ie gli eer TN GF] Pues c= = 5 £3, ae _ JTC RRS PRR po Pa Po ° Poriéctor Current,Ig "= mA ° — “Coitector to Base Voltage,Vop - V NF - Ic fan VBE(sat)»VCE(sat) - Ic TTLIL TC] F=900MH2] 3p Tc/tp=10 2 as | | [yt Verret | SC Be ellL Tipit yy, SCOT tA « 88 Sora) ak Hy [det TT eS Ten Fe TT = aes 2t(; Tt yi 2ST A) eee Collector Current ,Ig - mA ao Collector Current,Ig - mA Pc - Ta 600, oe ‘500
2 INE ETT
s att TEN TT ga | TN | PTT ETT IN E g % 20 40 60 60 100 120 ro 160 Ambient Témperature,Ta - °C
Site: Vce=10V S12e: Vce=10v f=200MHz step f=200MHz step | 450 a = 1208 60° jas NS AEBS, \\—& COSCSATE ROS PSA" wo KOSTAS ROM 2" 2 i200 OC Yip <\\ " CE" SBE | KN LETTER BRE | 0 | THOS ewe LIE ae (| or REPS O] OS TUT TOS AOR RT “110 S KS 280 SCALES Sh S00 OATH eee, Se BO =90° S2ie: Vce=10V S22e : VcE=10V f=200MHx step f=200MH2 step 02 0 [50
1208 NI ° :
LER LMS > S 410 ae TERS RMS AY | {~ CON Wi cereal £180" HS hee ° 0 eo =| LL \\> OR4 Xi SSSR we SREY ym SEES i2s Zi 100 a0" ~is0 MNo products desoribed or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. @ Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Ml Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No. 1951-4/4