2SC3776 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Features

« Small noise figure: NF=2.5dB typ(f=0.9GHz). « High power gain: MAG=12dB typ(f=0.9GHz). « High cutoff frequency: fy=3.0GHz typ. Absolute Maximum Ratings at Ta=25°C unit . Collector to Base Voltage Yopo . 25 v Collector to Emitter Voltage Von 16 v Emitter to Base Voltage VeBo 3 v Collector Current Ig 70 mA Base Current Ig 20 mA Collector Dissipation Po 400 ooW Junction Temperature Tj 150 «(°C Storage Temperature Tstg -55 to +150 Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Topo Vopt16¥s1p=0 1.0 pA Emitter Cutoff Current Tapo Vep=2V,Io=0 10 pA DC Current Gain hpp = Vog=10V,1¢=10mA 4o* 2008 Gain-Bandwidth Product fp Vop=10V,Ig=10mA 1.5 3.0 GHz Output Capacitance Cop | Vogt l0V, f= 1MHz 0.7 #+1.0 pF Reverse Transfer Capacitance c Vop=t0V, f= 1MHz 0.45 pF Forward Transfer Gain Sole? Vog=10V,Ic=10mA,f=0.9GHz 7 | 9 dB Maximum Available Power Gain MAG Vog=10V,I¢=10mA, f=0.9GHz 12 dB Noise Figure NF Vog=10V,Ip=3mA,f=0.9GHz, 2.5 dB See specified Test Circuit. *: The 2SC3776 is classified by 10mA hpp as follows:

40 C 80 | 60 D 120 | 100 E 200

(unit: mm) a 0.46 04s tt ie oes id Le so le 4.0 Leo JEDEC: TO-92 Cc. Collector EIAJ : SC-43 E. Emitter SANYO: NP B. Base : SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 5318M0/5137KI/0185KI,TS No. 1949-1/4

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H t S cH 2k H 9 \\ L2 ot cL ~SpF c2 ~10pF c3 ~10pF ca ~10pF c& ~10pF L1j| W=1. 5mm, 1=26mm strip line L2| .W24mm, 1+25mm strip line L3] 0. 5¢, 140mm LEH] 2tebead core : 'No.1949-2/4

a so Ig - VBE 3 bre _- Ic a LL ttt Ty TTT J veerrpv] aaa E

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LITT TTT | spares

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a | ‘ HERE oy, bq @ ee bette a 10 Base to Emitter Voltage,Vgp - V & Collector Current,I - mA fr _- Ie ' CresCob - VCB SOLO) &§ Co U o < ‘\\ : Pt} ety fli, Ue \\ | #2 PO ee g 8a 2 ae Pe oe eS PU) 8 pee 3 ! ; Coulector current stg - mA _ “Collector to Base Voltage, Von -v . 0 NF - I¢ et VBE(sat),VCE(sat) - Ic 3 - 2Sh0 3 |_| ve [ve a BOCA) ap peri eee ee erly jt Tit [J | sé Lb g J | 33 alo rerere vy #8 ITT Ty ty ae ; j pee ag TT eet 3 [71 ge [TFrrTi tT Ti Te SOOT) gg Coe He) Collector Current Ig - mA = Collector Current,Ig ~ mA

500 PC - ta

8 S56 * 60 60 100 120 os 160

Ambient Temperature,Ta - %: No. 1949~3/4

Site: Vce=10V ° S12e: Vce=10V f=200MHz steP #=200MHz step iso Ly Cu j2s | 100 FOSTERS nN KS SEERESD ve COS Ea" AY NU: \\ ee AN / L\\ TF LK REPS ff WAN LES eeeaee = £180" Seer 0. F O2p \\ LAS XGY,, “UES - CK hie LASSER SCV =| 200 Ly LAS? Jf PF RRS Teo P a “er S2te: Vce=10V S22e: Vce=10v f=200MHz step f=200MHz step 0° 750 1208 a ae ° ' och NS CK SACHING QOS 10 iS [PAX 250 Wan see ss 2eeee ag Pal aeesN to’! Press gery Tl do 0 — 7] SHIR OOLT PREY SSL ase LEAS SL a Si 200 SSCS Goo STERN a SEES an — LS Tjs0 er IINo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. ™@ Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of . their officers and employees jointly or severally. HM Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees: are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No. 1949-474