2SC3775 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Features
. Small noise figure: NF=1.5dB typ(f=0.9GHz). + High power gain: MAG=14dB typ(f=0.9GHz). « High cutoff frequency: fp=5.0GHz typ. Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Vogo 20 v Collector to Emitter Voltage Vogo 12 v Emitter to Base Voltage Vepo 3 Vv Collector Current Ig 100 «mA Base Current Ip 30 mA Collector Dissipation Po 250 «WwW Junction Temperature Tj 150 ° Storage Temperature Tstg -55 to +150 «(°C Electrical Characteristies at Ta=25°C min typ max unit Collector Cutoff Current Topo Vop=12V,1g=0 1.0 pA Emitter Cutoff Current Igpo Vept2¥sIo=0 10° pA DC Current Gain bpp = Vog=10V,1,=20mA 4o* 2008 Gain-Bandwidth Product. fr Voge 10V,Ip=20mA 5.0 GHz Output Capacitance Cop Voge 10V, f= 1MHz 0.9 pF Reverse Transfer Capacitance c. Vop=10V, f= 1MHz 0.6 pF Forward Transfer Gain IsBie? Vop=10V,19=20mA,f=0.9GHz 8.5 10 aB Maximum Available Power Gain MAG Voge 10V,Ip=20mA ,f=0.9GHz 14 dB Noise Figure NF Vog= 10V,Ip=5mA ,f=0.9GHz, 1.5 3.0 dB See specified Test Circuit. *: The 28C3775 is classified by 20mA bpp as follows: 40 2. 80 | 60 3 120 | 100 4 200 (Note) Marking :0Y Ik 4 . bpp rank :2,3, Package Dimensions 2018A (unit: mm) zs 0% i . wn we ! a9 + bos peas LF base) C: Collector B: Base | (] (] E: Emitter | HIE 0.4 SANYO: CP } SANYO Electric Co.,Ltd. Semiconductor Business Headquarters | TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 5318M0/5137KI/0185KI,TS No. 1948-1/4
—SeSeSeSSSSsSSSSSSSSSsSSSSSsSssSSSSSSSSSSSSSSSSSSSSSSSSSEesesFSSSSSSeee NF Test Circuit , 3 1 ° vB Ove ' cH 2 : 9 LN L2 oti] Unit (Resistance : 2) [| 900MHz c1 ~5pF c2 ~10pF c3 ~10pF cal ~10pF cs ~10pF L1] W+1. 5mm, 1#265mm strip line L2| W+4mm, 1=25mm strip line | CH] 2t+bead core | Sa No. 1948-2/4
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Stile: Vce=10V S12e: Vce=10V ft=200MHz step t=200MHz step ww so” 1.2 jos | 120° Se a: SERS Ye SOC SPS
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<i LA PLETE RON mV LEP RRBESSOON : [ae SN HH Rey ARAL. UST -j02 Urs SOLES Se Sis KARO PEF SSSA ow = SEEK “i085 ——, COREE i ie Oe i 90° S21e: Vce=10V S22e: Vce=10v f=200MHz step f=200mMHz step 0° it ne VT . - ; AEN EES 98 — SBE Toes LSPINETSK®\\ sot aT a ADK OBIE RAK [TIESTO 02? PA LIK LS WEST L\\ LEAST AN PPReneessS 22- een SSN 180 [Pres camel yo 8 2S KIM an att 04 BG SST aa fee smak SH SSS 282 x Ly OEE? SEAS a a "0 SE “60° 7 IE No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may direotly or indirectly cause injury, death or property loss, Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. I Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- . eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No. 1948-4/4