2SC3757 PANASONIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

Silicon NPN epitaxial planer type For high speed switching I Features

  • High-speed switching
  • Low collector to emitter saturation voltage V CE(sat)
  • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
  • Allowing pair use with 2SA1738 I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector to base voltage V CBO 40 V Collector to emitter voltage V CES 40 V Emitter to base voltage V EBO 5V Peak collector current I CP 300 mA Collector current I C 100 mA Collector power dissipation P C 200 mW Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Marking Symbol: 2Y Unit: mm 0.40+0.10 –0.05 (0.65) 1.50+0.25 –0.05 2.8+0.2 –0.3 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 0.16+0.10 –0.06 0.4±0.2 10° 0 to 0.1 1.1+0.2 –0.1 1.1+0.3 –0.1 1: Base JEDEC: TO-236 2: Emitter EIAJ: SC-59 3: Collector Mini Type Package Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CBO VCB = 15 V, IE = 0 0.1 µA Emitter cutoff current I EBO VEB = 4 V, IC = 0 0.1 µA Forward current transfer ratio * hFE VCE = 1 V, IC = 10 mA 60 200 Collector to emitter saturation voltage V CE(sat) IC = 10 mA, IB = 1 mA 0.17 0.25 V Base to emitter saturation voltage V BE(sat) IC = 10 mA, IB = 1 mA 1.0 V Transition frequency f T VCB = 10 V, IE = −10 mA, f = 200 MHz 450 MHz Collector output capacitance C ob VCB = 10 V, IE = 0, f = 1 MHz 2 6 pF Turn-on time t on 17 ns Turn-off time t off Refere to the measurement circuit 17 ns Storage time t stg 10 ns I Electrical Characteristics Ta = 25°C ± 3°C Note) *: Rank classification Rank Q R hFE 60 to 120 90 to 200 Marking symbol 2YQ 2YR

PC  Ta IC  VCE VCE(sat)  IC VBE(sat)  IC hFE  IC 0 160 40 120 80 240 200 160 120 Ambient temperature Ta (°C) Collector power dissipation PC (mW) 120 100 2.5 mA 2.0 mA 1.5 mA 1.0 mA 0.5 mA IB = 3.0 mA Collector to emitter voltage VCE (V) Collector current IC (mA) Ta = 25°C 0.01 0.03 0.1 0.3 0.1 0.3 100 1 3 10 30 100 Ta = 75°C 25°C −25°C Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) IC / IB = 10 0.01 0.03 0.1 0.3 100 10 30 100 300 1 000 Ta = −25°C 25°C 75°C Base to emitter saturation voltage VBE(sat) (V) Collector current IC (mA) 0.1 0.3 600 500 400 300 200 100 1 3 10 30 100 Ta = 75°C 25°C −25°C Forward current transfer ratio hFE VCE = 1 V Collector current IC (mA) 600 500 400 300 200 100 Transition frequency fT (MHz) Emitter current IE (mA) VCB = 10 V Ta = 25°C 3 10 30 100 Collector output capacitance Cob (pF) Collector to base voltage VCB (V) IE = 0 f = 1 MHz Ta = 25°C fT  IE Cob  VCB Switching time measurement circuit ton , toff Test circuit t stg Test circuit 220 Ω 3.3 kΩ 0.1 µF 3.3 kΩ 50 Ω VCC = 3 V VOUT 50 Ω VIN = 10 V V IN = 10 V VDD = −3 V VIN VIN VOUT ton toff VOUT 10% 10% 90%90% 910 Ω 500 Ω 0.1 µF 500 Ω 90 Ω VCC = 10 V VOUT 50 Ω VDD = 2 V 1 kΩA VIN tstg VOUT 10% 10% (Waveform at A)