2SC3756 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3756
DESCRIPTION
- With TO-3PML package
- High speed
- High breakdown voltage
- High reliability
APPLICATIONS
- For TV horizontal deflection output
1 Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 6 A Ta=25℃ 3.0 PC Collector dissipation TC=25℃ 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3PML) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3756 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=0.1A ;IB=0 800 V VCEsat Collector-emitter saturation voltage I C=4A ;IB=1A 5.0 V VBEsat Base-emitter saturation voltage I C=4A ;IB=1A 1.5 V ICBO Collector cut-off current V CB=800V ;IE=0 10 μA ICES Collector cut-off current V CE=1500V; RBE=0 1.0 mA IEBO Emitter cut-off current V EB=4V ;IC=0 10 μA hFE-1 DC current gain I C=1A ; VCE=5V 8 36 hFE-2 DC current gain I C=4A ; VCE=5V 4
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3756 PACKAGE OUTLINE Fig.2 outline dimensions