2SC3750 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3750
DESCRIPTION
- With TO-220F package
- High breakdown voltage and high reliability.
- Fast switching speed.
- Wide area of safe operation
APPLICATIONS
- 500V/5A switching regulator applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 2 A PC Collector dissipation TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-220F) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3750 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞ 500 V V(BR)CBO Collector-base breakdown voltage I C=1mA ;IE=0 800 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage I C=3A; IB=0.6A 1.0 V VBEsat Base-emitter saturation voltage I C=3A; IB=0.6A 1.5 V ICBO Collector cut-off current V CB=500V; IE=0 10 μA IEBO Emitter cut-off current V EB=5V; IC=0 10 μA hFE-1 DC current gain I C=0.6A ; VCE=5V 15 50 hFE-2 DC current gain I C=3A ; VCE=5V 8 fT Transition frequency I C=0.6A ; VCE=10V 18 MHz COB Collector output capacitance f=1MHz;V CB=10V 80 pF Switching times ton Turn-on time 0.5 μs tstg Storage time 3.0 μs tf Fall time IC=4A; IB1=0.8A;IB2=-1.6A VCC=200V ,RL=50Ω 0.3 μs hFE-1 Classifications L M N 15-30 20-40 30-50
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3750 PACKAGE OUTLINE Fig.2 Outline dimensions
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3750