2SC3748 ISC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3748 DESCRIPTION ·

  • With TO-220F package
  • Low saturation voltage.
  • Excellent dependence of hFE on current.
  • Fast switching speed.

APPLICATIONS

  • Car-use inductance drivers, lamp drivers.
  • Inverters drivers, conveters (strobes, flashes, FLT lighting circuits).
  • Power amplifiers
  • High-speed switching applications PINNING PIN DESCRIPTION

1 Base

2 Collector;connected to

3 Emitter

Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A ICM Collector current-peak 12 A PC Collector dissipation TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-220F) and symbol

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3748 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage I C=1mA; IE=0 80 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA; RBE=∞ 60 V V(BR)EBO Emitter-base breakdown voltage I E=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage I C=5A; IB=0.25A 0.4 V ICBO Collector cut-off current V CB=40V ;IE=0 100 μA IEBO Emitter cut-off current V EB=4V; IC=0 100 μA hFE DC current gain I C=1A ; VCE=2V 70 280 fT Transition frequency I C=1A ; VCE=5V 100 MHz Switching times ton Turn-on time 0.1 μs tstg Storage time 0.5 μs tf Fall time VCC=20V; IC=5A IB1=-IB2=0.25A RL=4Ω 0.1 μs ‹ hFE Classifications Q R S 70-140 100-200 140-280

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3748 PACKAGE OUTLINE Fig.2 Outline dimensions

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3748