2SC3747 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc Website：www.iscsemi.cn isc Silicon NPN Power Transistor 2SC3747
DESCRIPTION
- Good Linearity of h FE
- High Switching Speed
- Low Collector Saturation Voltage
- Complement to Type 2SA1470
APPLICATIONS
- Inductance, lamp drivers
- Inverters, converters
- Power amplifiers
- High-speed switching applications. ABSOLUTE MAXIMUM RATINGS(T a =25℃) SYMBOL PARAMETER VALUE UNIT V CBO Collector-Base Voltage 80 V V CEO Collector-Emitter Voltage 60 V V EBO Emitter-Base Voltage 5 V I C Collector Current-Continuous 7 A I CM Collector Current-Pulse 10 A P C Collector Power Dissipation C =25℃ 25 W Collector Power Dissipation a =25℃ 2.0 T J Junction Temperature 150 ℃ T stg Storage Temperature -55~150
isc Website：www.iscsemi.cn isc Silicon NPN Power Transistor 2SC3747
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT V (BR)CEO Collector-Emitter Breakdown Voltage I C = 1mA; R BE = ∞ 60 V V (BR)CBO Collector-Base Breakdown V oltage I C = 1mA; I E = 0 80 V V (BR)EBO Emitter-Base Breakdown Voltage I E = 1mA; I C = 0 5 V V CE (sat) Collector-Emitter Saturation Voltage I C = 3.5A; I B = 0.175A 0.4 V I CBO Collector Cutoff Current V CB = 40V ; I E = 0 100 μA I EBO Emitter Cutoff Current V EB = 4V; I C = 0 100 μA h FE DC Current Gain I C = 1A ; V CE = 2V 70 280 f T Current-Gain—Bandwidth Product I C = 1A ; V CE = 5V 100 MHz Switching times t on Turn-on Time I C = 3A , I = -I = 0.15A; R L = 6.67Ω; V CC = 20V 0.1 μs t stg Storage Time 0.5 μs t f Fall Time 0.1 μs h FE Classifications Q R S 70-140 100-200 140-280