2SC3743 ISC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3743

DESCRIPTION

  • Collector-Emiiter Breakdown Voltage- : V (BR)CEO= 800V(Min.)
  • Wide Area of Safe Operation
  • High Speed Switching

APPLICATIONS

  • Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 4 A IB B Base Current-Continuous 1 A Collector Power Dissipation @Ta=25℃ 2 PC Collector Power Dissipation @TC=25℃ 40 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3743

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A 1.2 V ICBO Collector Cutoff Current VCB= 900V; IE= 0 50 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 50 μA hFE-1 DC Current Gain IC= 0.1A; VCE= 5V 6 hFE-2 DC Current Gain IC= 0.8A; VCE= 5V 6 Switching Times ton Turn-on Time 1.0 μs ts Storage Time 4.0 μs tf Fall Time IC= 0.8A; IB1= 0.16A;IB2= -0.32A; VCC= 250V 1.0 μs isc Website：www.iscsemi.cn