2SC3739-3 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Transistors NPN Transistors 2SC3739 ■ Features
- High Gain Bandwidth Product:fT=200MHz(min)
- Complementary to 2SA1464 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 500 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA，IB= 0 40 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 40V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 4V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB=50mA 0.25 0.75 Base - emitter saturation voltage VBE(sat) IC=500 mA, IB=50mA 1 1.2 hFE(1) VCE= 1V, IC= 150mA 75 300 hFE(2) VCE= 2V, IC= 500mA 20 75 Turn-on time ton 35 Storage time tstg 225 Turn-off time toff 275 Collector output capacitance Cob VCB= 10V, IE=0,f=1MHz 3.5 8 pF Transition frequency fT VCE= 10V, IE=-20mA 200 400 MHz VCC=30V,IC=150mA,IB1=-IB2=15mA ns DC current gain V uA V ■ Classification of hfe(1) Type 2SC3739-B12 2SC3739-B13 2SC3739-B14 Range 75-150 100-200 150-300 Marking B12 B13 B14 150 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 1. Base 2. Emitter 3. Collector 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1
www.kexin.com.cn2 Transistors NPN Transistors 2SC3739 ■ Typical Characterisitics
www.kexin.com.cn 3 Tran sistors NPN Transistors 2SC3739 ■ Typical Characterisitics