2SC3707 PANASONIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Silicon NPN epitaxial planer type For UHF amplification n Features l Possible with the small current and low voltage. l High transition frequency fT. l Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1:Bae JEDEC:TO–236 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package 2.8 +0.2 –0.3 1.5 +0.25 –0.05 0.950.95 1.9–0.2 0.4 +0.1 –0.05 1.1 +0.2 –0.10.8 0.4–0.2 0 to 0.1 0.16 +0.1 –0.06 1.45 0.1 to 0.3 2.9 +0.2 –0.05 Symbol V CBO V CEO V EBO IC PC Tj Tstg Ratings 150 –55 ~ +150 Unit V V V mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Maximum unilateral power gain Noise figure Symbol I CBO IEBO hFE fT C ob | S21e |2 GUM NF Conditions V CB = 10V , IE = 0 V EB = 1.5V , IC = 0 V CE = 1V , IC = 1mA V CE = 1V , IC = 1mA, f = 800MHz V CB = 1V , IE = 0, f = 1MHz V CE = 1V , IC = 1mA, f = 800MHz V CE = 1V , IC = 1mA, f = 800MHz V CE = 1V , IC = 1mA, f = 800MHz min typ 100 0.4 3.5 max 150 Unit nA mA GHz pF dB dB dB Marking symbol :2X Note: Handle the product with care because this is sensitive to the electrostatic breakdown by its structure.
PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IC C ob — V CB GUM — I C NF — IC 0 160 40 120 80 14020 100 60 100 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) Ta=25˚C 45mA 40mA 35mA 20mA 30mA 25mA 15mA 10mA 5mA IB=50mA Collector to emitter voltage VCE (V) Collector current IC (mA ) VCE =1V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3
100 IC /IB=10
Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 240 200 160 120 VCE =1V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 0.1 1 10 1000.3 3 30 VCE =1V f=800MHz Ta=25˚C Collector current IC (mA ) Transition frequency fT (GHz ) 0.1 1 10 1000.3 3 30 1.2 1.0 0.8 0.6 0.4 0.2 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.1 1 10 1000.3 3 30 VCE =1V (Rg=50W ) f=800MHz Ta=25˚C Collector current IC (mA ) Noise figure NF (dB) 0.1 1 10 1000.3 3 30 VCE =1V f=800MHz Ta=25˚C Collector current IC (mA ) Maximum unilateral power gain GUM (dB)