2SC3704

2SC3704 PANASONIC

Document overview

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Technical content

Silicon NPN epitaxial planer type For UHF band low-noise amplification n Features l Low noise figure NF. l High gain. l High transition frequency fT. l Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1:Bae JEDEC:TO–236 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package 2.8 +0.2 –0.3 1.5 +0.25 –0.05 0.950.95 1.9–0.2 0.4 +0.1 –0.05 1.1 +0.2 –0.10.8 0.4–0.2 0 to 0.1 0.16 +0.1 –0.06 1.45 0.1 to 0.3 2.9 +0.2 –0.05 Symbol V CBO V CEO V EBO IC PC Tj Tstg Ratings 200 150 –55 ~ +150 Unit V V V mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Noise figure Maximum unilateral power gain Foward transfer gain Symbol I CBO IEBO hFE1 hFE2 fT C ob NF GUM | S21e |2 Conditions V CB = 15V , IE = 0 V EB = 1V , IC = 0 V CE = 8V , IC = 20mA V CE = 1V , IC = 3mA V CE = 8V , IC = 20mA, f = 0.8GHz V CE = 10V , IE = 0, f = 1MHz V CE = 8V , IC = 7mA, f = 800MHz V CE = 8V , IC = 20mA, f = 800MHz V CE = 8V , IC = 20mA, f = 800MHz min typ 150 0.7 1.0 max 300 280 1.2 1.7 Unit mA mA GHz pF dB dB dB Marking symbol :2W

PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IC C ob — V CB GUM — I C NF — IC 0 160 40 120 80 14020 100 60 240 200 160 120 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 2 10826 4 Ta=25˚C 350mA 300mA 250mA 200mA 150mA 100mA 50mA IB=400mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 120 100 VCE =8V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 IC /IB=10

Ta=75˚C, 25˚C, –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 600 500 400 300 200 100 VCE =8V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 0.1 1 10 1000.3 3 30 VCE =8V f=800MHz Ta=25˚C Collector current IC (mA ) Transition frequency fT (GHz ) 0.1 1 10 1000.3 3 30 2.4 2.0 1.6 1.2 0.8 0.4 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.1 1 10 1000.3 3 30 VCE =8V (Rg=50W) f=800MHz Ta=25˚C Collector current IC (mA ) Noise figure NF (dB) 0.1 1 10 1000.3 3 30 VCE =8V f=800MHz Ta=25˚C Collector current IC (mA ) Maximum unilateral power gain GUM (dB)