2SC3675 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc Website：www.iscsemi.cn 1 isc & iscsemi isregisteredtrademark iscSiliconNPNPowerTransistor 2SC3675
DESCRIPTION
- LowCollectorSaturationVoltage
- High breakdown voltage
- SmallCob
- GoodLinearity ofhFE
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- High voltageamplifier
- High-voltageswitchingapplications
- Dynamisfocus applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 1500 V VCEO Collector-EmitterVoltage 900 V VEBO Emitter-BaseVoltage 5 V IC CollectorCurrent-Continuous 0.1 A ICM CollectorCurrent-Pulse 0.3 A PC CollectorPowerDissipation @TC=25℃ 10 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
isc Website：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor 2SC3675 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=1mA;IB=0 900 V VCE(sat) Collector-EmitterSaturationVoltage IC=20mA;IB=4mA 5.0 V VBE(sat) Base-EmitterSaturationVoltage IC=20mA;IB=4mA 2.0 V ICBO CollectorCutoffCurrent VCB=900V;IE=0 10 μA IEBO EmitterCutoffCurrent VEB=4V;IC=0 10 μA hFE DCCurrentGain IC=10mA;VCE=5V 30 fT Current-Gain—BandwidthProduct IE=10mA;VCE=10V 6 MHz COB OutputCapacitance IE=0;VCB=100V;ftest=1.0MHz 2.8 pF