2SC3661 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 1
Technical content
Features
Low frequency general-purpose amplifiers, drivers, muting circuit. Adoption of FBET process. High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). High VEBO (VEBO 15V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 30 V Collector-emitter voltage V CEO 25 V Emitter-base voltage V EBO 15 V Collector current I C 300 mA Collector current (pulse) I cp 500 mA Collector dissipation P C 200 mW Junction temperature T j 125 Storage temperature T stg - 5 5t o+ 1 2 5 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current I CBO VCB = 20V, IE=0 0.1 ìA Emitter cutoff current I EBO VEB = 10V, IC=0 0.1 ìA DC current gain h FE VCE =5V , IC = 10mA 800 1500 3200 Gain bandwidth product f T VCE = 10V , IC = 10mA 250 MHz Output capacitance C ob VCB = 10V , f = 1.0MHz 2.7 pF Collector-emitter saturation voltage V CE(sat) IC = 200mA , IB = 4mA 0.12 0.5 V Base-emitter saturation voltage V BE(sat) IC = 200mA , IB = 4mA 0.85 1.2 V Collector-base breakdown voltage V (BR)CBO IC = 10ìA , IE =0 3 0 V Collector-emitter breakdown voltage V (BR)CEO IC =1 m A,IB =0 2 5 V Emitter-base breakdown voltage V (BR)EBO IE = 10ìA , IC =0 1 5 V Marking Marking FY