2SA1420 SANYO
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Reo a PNP/ NPN Epitaxial Planar Silicon Transistors ; eee Oe Switching Applications [ie eae (with Bias Resistor) Use ff g® eee . Switching circuit, inverter circuit, interface circuit, driver ‘edroudt, Features oF &, = ff . With bias resistor (R1I=47kQ ,R2=47kO ). oF een, Boe? ee Collector to Base Voltage Yopo rn Ve Vc en Collector to Emitter Voltage Voro fe gy a C-)50 v Emitter to Base Voltage VeBo if & & e)10 Vv Collector Current Ig FE go So A#)100-— oma Collector Current(Pulso) Ip 8 GY k= )2000 mA Collector Dissipation Po fe “hye ae 4000 omW Junction Temperature Tye me OA 150° Storage Temperature dee’ eS, £255 to +150 °C Electrical Characteristics at Ta#25°C a fé min typ max unit Collector Cutoff Current Ippo” | Vogel —)MOV, Tge0 (-)0.1 #A Collector Cutoff Current I¢go “Wgpete) 4OVs Tp=0 (-)0.5 ywA Emitter Cutoff Current Ikpq . Vege(~)5¥iFo=0 (=)30(~)53(=)80 vA DC Current Gain Mpg Qo Weg (-)5¥) T= (-)5ma 50 Gain-Bandwidth Product) fy... “WVog=(>) 40V, fo2(~)5mA 250 Miz Output Capacitance Beit. Vope (=) 10V, f= 1MHz 3.7 pF Collector to Emitter 9 Voutsat) Zoe(-)SmA,Tg=(-)0.25mA (-)0,1(-)0.3V Saturation Voltage Ws Collector to Basé — “"Webpy ggg’ Ie=(-) 102A, Tp=0 (-)50 v Breakdown Voltage silt “Qs Collector to’Emitter “\\ V(px)cEo Igz(~)1002A,Rpp=co | (~)50 v Breakdown Voltages, Saf? Continued on next page. Bleotrioay’ Connection , ef ff Seg a fe Case Outline 2003A ga Rh vA oe tm 20 0.44 fear ile Pecy ox ir ee a “a, pe —— te] She O45 Ehaler Erte Le s0ol-— 16.0 _ wl 9 DEC: TO-92 B. Bas pe npn Brag + sc-43 ¢. collector SANYO: NP EB. Bnitter Specifications and information herein are subject to change without notice. SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 3277KI/N284KI/TS No. 1682-1/2
Continued from preceding page. min typ max unit Input OFF-State Voltage Vi¢gep) Vogt(~)5V,1¢e(-) 100Ai-0.8-1.1(-1.5 Input ON-State Voltage — Vy(on) Vogt(-)0-2V,I¢(-)5mA (1.0(-2.505.0 V Input Resistance ri 32 AT 62 ka Resistance Ratio R1/R2 0.9 fPONs) - ver ff #%, 7 Input ON-State Voltage: 5V or more ef at .) ff Input OFF-State Voltage: 0.8V or less és & * As (Fon PNP »gfiypolagity is’ reversed.) a Ri: 47k (“hy /\\/ / aia Gj R23 47K ‘es ap i im ia ison mee ea 85 [For PNP, winue sign is onttted. Collector Current tg - ghee “ y' Input OFF-State Voltage, ¥r(ge) ~ V eee asines TTA an” AT askegt SEL R? + 474 2 aa ee ed 8 iter | i eft lA |__| 5 anol N i a Sake ae ml F} ‘\\
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a) ape ES oF m7) O20 40680006. SA “agente stor fiytrent ty oA Ambient Temperature,Ta - °C