2SC3651 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
+ High DC current gain (h, E7909 to 2000) . High breakdown voltage Thon £100V) « Low collector-tg-enitter seeuration voltage CVoR(sat)$0-5VI + High Vigo (Vepo£15¥) « Very small FPS making it easy to provide high-density, small-sized hybrid IC's, Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Vopo 120 Vv Collector to Emitter Voltage Vero 100 v Emitter to Base Voltage Vezo 15 v Collector Current Ig 200 mA Collector Current(Pulse) Icp 300 mA Collector Dissipation Po 500 oW Pot 1.3 W Junction Temperature Tj 150% Storage Temperature Tstg 55 to +150 °C * Mounted on ceramic board (250mm@x0, 8mm) Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Topo Vop=80V, 1,0 0.7 pA Emitter Cutoff Current Tgp Vpp=10V,Ig=0 0.7 pA DC Current Gain beet) Vope5V, Ip=10mA 500 1000 2000 hpg(2) Vog=5V,I¢=100mA 400 . Gain-Bandwidth Product fy Voge 10V, Io=10mA 150 MHz Output Capacitance Cop Vopr l0V, f=1MHz 6.5 pF Collector to Emitter Vor(sat) 1¢=100mA,I,=2mA 0.15 0.5 v Saturation Voltage Continued on next page. Marking: CG- Package Dimensions 2038 (unit :mm) 45 15. tof +5 50. 0.6 E: Emitter €: Collector B: Base SANYO: PCP (Bottom View) SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 4217KI/2145KI,TS No.1779-1/3
Continued from preceding page. min typ max unit Base to Emitter Vpe(sat) Z¢=100mA,Zp=2mA 0.85 1.2 V Saturation Voltage Collector to Base V(BR)CBO Ig=10pA,Ip=0 120 v Breakdown Voltage Collector to Emitter VBR)CEO Ig=1mA,Ip=0 100 v Breakdown Voltage Emitter to Base Vopryepo 2g=10pA,I_=0 15 v Breakdown Voltage 00 7 Ic - VCE 200, Ic - VcE A Pulse Pulse | ooh is bs & pe — 3 160 | y eer [7 Sok | ' Sass ol | ag ph = + tad Zz £ (_ 2 Tl é i OUR et | 3 i) Zea eee 2a E _ —= td a) Aer Ip=o Ip=0 9% 5 ~ Ly Cy 100 9 OF iy Tet To Collector to Emitter Voltage,Vop - V Collector to Emitter Voltage,Vog ~ V Ic - ver 5 hre ~ Ic Bx Pulse Pi Pulse Ta=75 eq rt Fee g ¢ tL se PNT fa | | | 8 AS fy | PEE EE HOT) i get iT it tt iN | a 4) lan) 3 ] LP Ty yey) ef PA a 0 a 04 06 0.6 TO Ey a wo 62 063 Base to Emitter Voltage,Vpp - V Collector Current,Ig = mA ft - Ic fob - Vee 1000 = EF = 2.) 7 TT Uy] yestw at TT Ty TT TER | STE aN tT é 8
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a" TN 6, rT gi, iT De ay Sas veo, a a ay tT oT Ne Ea & os} NX sept | tit | tty 3 es ays gti | Lf fe a . ee Ngo 3 3}1 Pulse 3% a A © AMounted on ceramic ptt s ING board (250mm°x0, 8mm) Iii ty i) 1.0 oO 2 Co) 60 Co) WO 120 of? c-1) 10 10 S C) Ambient Temperature,Ta ~ °C Collector to Emitter Voltage, Vor - V HINo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. . Wi Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, ' subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibilty for any fault or negligence which may be cited in any such chim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. i Wi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is acourate and reliable, but no Buarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. a ere No. 1779-3/3