2SC3649_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

www.kexin.com.cn 1 Transistors NPN Transistors 2SC3649 ■ Features

  • High breakdown voltage and large current capacity.
  • Complementary to 2SA1419 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 1.5 Peak Collector Current ICM 2.5 Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 180 Collector- emitter breakdown voltage VCEO Ic= 1 mA，RBE= ∞ 160 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 6 Collector-base cut-off current ICBO VCB= 120 V , IE= 0 1 Emitter cut-off current IEBO VEB= 4V , IC=0 1 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 0.13 0.45 Base - emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 0.85 1.2 VCE= 5V, IC= 100mA 100 400 VCE= 5V, IC= 10mA 80 Turn-ON Time ton 40 Storage Time tstg 1200 Fall Time tf 80 Collector output capacitance Cob VCB= 10V,f=1MHz 14 pF Transition frequency fT VCE= 10V, IC= 50mA 120 MHz DC current gain hFE V uA V See sepcified Test Circuit. ns ■ Classification of hfe(1) Type 2SC3649-R 2SC3649-S 2SC3649-T Range 100-200 140-280 200-400 Marking CER CES CET

www.kexin.com.cn2 Transistors NPN Transistors 2SC3649 tiucriC tseT emiT gnihctiwS INPUT 100V 50Ω RL 100μF 470μF --5V IC=10IB1=--10IB2=0.7A (For PNP, the polarity is reversed) + + VR PW=20μs D.C.≤1% RB IB1 IB2 ■ Typical Characterisitics IC -- VCE IC -- VCE Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A 2 41 530 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.2 0.6 0.4 0.8 1.0 0 10 20 30 40 500 2SC3649 2SC3649 IB=0mA IB=0mA 20mA 50mA 30mA 40mA 10mA 5mA 2mA 1mA 0.5mA 5.0 mA 4.5 mA 2.5mA 3.5mA 4.0mA 2.0mA 3.0mA 1.5mA 1.0mA hFE -- IC Collector Current, IC -- A DC Current Gain, hFE IC -- VBE Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- A 0.4 0.8 1.6 1.2 5 77 320.01 0.1 5 73 32 21.0 100 1000 2SC3649 VCE=5V 2SC3649 VCE=5V --25 Ta=75 --25°C 25°C Ta=75°C

www.kexin.com.cn 3 Transistors NPN Transistors 2SC3649 ■ Typical Characterisitics Cob -- VCB Collector-to-Base Voltage, VCB -- V Output Capacitance, Cob -- pF VCE(sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 20.01 0.15 77 3 2 1.05 73 2 3 21.0 5 73 10 2 5 73 100 100 1000 100 2SC3649 IC / IB=10 --25°C 25°C Ta=75°C 2SC3649 For PNP, minus sign is omitted PC -- Ta Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C VBE(sat) -- IC Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 0.01 0.15 732 1.05 73 32 2 1.0 0.2 0.4 0.6 0.8 1.8 1.6 1.4 1.2 1.0 00108020 60 06104 140120 Mounted on a ceramic board (250mm 0.8mm) No heat sink 2SC3649 IC / IB=10 25°C 75°C Ta=--25°C 2SC3649 A S O Collector Current, IC -- A Collector-to-Emitter Voltage, VCE -- V 0.01 0.1 1.0 1.07 32 7 105 3 32 27 1005 1ms10ms100 ms DC operation For PNP, minus sign is omitted Single pulse Ta=25°C Mounted on a ceramic board (250mm2 0.8mm) 2SC3649ICP=2.5A IC=1.5A fT -- IC Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz 20.01 5 73 0.1 22 5 73 1.0 100 2SC3649 2SC3649 For PNP, minus sign is omitted