2SC3648-HF_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

www.kexin.com.cn 1 Transistors ■ Features

  • High breakdown voltage and large current capacity.
  • Fast switching speed.
  • Complementary to 2SA1418-HF 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 0.7 Peak Collector Current ICM 1.5 Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 180 Collector- emitter breakdown voltage VCEO Ic= 1 mA，RBE= ∞ 160 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 6 Collector-base cut-off current ICBO VCB= 120 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 4V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=250mA, IB=25mA 0.12 0.4 Base - emitter saturation voltage VBE(sat) IC=250mA, IB=25mA 0.85 1.2 VCE= 5V, IC= 100mA 100 400 VCE= 5V, IC= 10mA 90 Turn-ON Time ton 50 Storage Time tstg 1000 Fall Time tf 60 Collector output capacitance Cob VCB= 10V,f=1MHz 8 pF Transition frequency fT VCE= 10V, IC= 50mA 120 MHz DC current gain hFE V uA V See sepcified Test Circuit. ns ■ Classification of hfe (1) Type 2SC3648-R-HF 2SC3648-R-HF 2SC3648-T-HF Range 100-200 140-280 200-400 Marking CDR F CDS F CDT F
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish NPN Transistors 2SC3648-HF

www.kexin.com.cn2 Transistors tiucriC tseT emiT gnihctiwS INPUT 100V 50Ω 100μF 470μF --5V IC=20IB1=--20IB2=300mA (For PNP, the polarity is reversed) + + VR PW=20μs D.C.≤1% 333Ω RB IB1 IB2 ■ Typical Characterisitics IC -- VCE Collector Current, IC -- mA Collector-to-Emitter Voltage, VCE -- mV IC -- VCE Collector Current, IC -- mA Collector-to-Emitter Voltage, VCE -- V 0 20 30 07060501 08040 200 400 600 800 1000 IB=0mA 0.5mA 2.5mA 3.0mA 4.0 mA 3.5mA 2.0mA 1.5mA 1.0mA 004 008002 0001006000 100 200 400 300 600 500 700 800 IB=0mA 80mA 90mA 30mA 20mA 10mA 40mA 50mA 100mA 60mA 70mA From top VCE(sat) -- IC Collector Current, IC -- mA Collector-to-Emitter Saturation Voltage, VCE(sat) -- V hFE -- IC Collector Current, IC -- mA DC Current Gain, hFE 210 5 77 3 2100 210005 7353 1000 100 5 735 7 7523 3210 100 21000 1.0 0.1 IC / IB=10 For PNP, minus sign is omitted Pulse VCE =2V5V V NPN Transistors 2SC3648-HF

www.kexin.com.cn 3 Transistors ■ Typical Characterisitics A S O Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A fT -- IC Collector Current, IC -- mA 0.01 0.1 1.0 1.0 32 7 105 3 32 275 100 1ms10ms100 ms DC operation 21075 10075 23 1000753 100 VCE=10V ICP=1.5A IC=0.7A Ta=25°C Single pulse Mounted on a ceramic board (250mm2 0.8mm) For PNP, minus sign is omitted Gain-Brandwidth Product, fT -- MHz PC -- Ta Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W Collector-to-Base Voltage, VCB -- V Output Capacitance, Cob -- pF Cob -- VCB 1.0 100 101.0 5 732 1005 73 22 1.6 1.4 1.8 1.2 0.8 0.4 0.2 0.6 1.0 0 08060 40 04102 120100 160 No heat sink For PNP, minus sign is omitted f=1MHz IC -- VBE Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- mA hFE -- IC 200 800 1000 600 400 VCE=5V For PNP, minus sign is omitted NPN Transistors 2SC3648-HF