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UNISONIC TECHNOLOGIES CO., LTD 2SC3648 NPN SILICON TRANSISTOR www.unisonic.com.tw 1 o f 5 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R208-038.D HIGH-VOLTAGE SWITCHING PREDRIVER APPLICATIONS FEATURES * High Breakdown Voltage and Large Current Capacity * Fast Switching Speed * Over Current Protection Function SOT-89 ORDERING INFORMATION Ordering Number Package Pin Assignment Packing 1 2 3 2SC3648G-x-AB3-R SOT-89 B C E Tape Reel Note: Pin Assignment: B: Base C: Collector E: Emitter MARKING
2SC3648 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 o f 5 www.unisonic.com.tw Q W - R 2 0 8 - 0 3 8 . D ABSOLUTE MAXIMUM RATING (TA= 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage V CBO 180 V Collector to Emitter Voltage V CEO 160 V Emitter to Base Voltage V EBO 6 V Collector Current I C 0.7 A Collector Current (Pulse) I CP 1.5 A Collector Dissipation P C 500 mW Junction Temperature T J 150 °C Storage Temperature T STG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BV CBO I C =10μA, IE =0 180 V Collector-Emitter Breakdown Voltage BV CEO I C =1, RBE =∞ 160 V Emitter-Base Breakdown Voltage BV EBO I E =10μA, IC=0 6 V Collector Cutoff Current I CBO V CB =120V, IE =0 0.1 μA Emitter Cutoff Current I EBO V EB =4V, IC =0 0.1 μA Collector-Emitter Saturation Voltage V CE(SAT) I C =250mA, IB =25mA 0.12 0.4 V Base-Emitter Saturation Voltage V BE(SAT) I C =250mA, IB =25mA 0.85 1.2 V Output Capacitance Cob V CB =10V, f =1MHz 8 pF DC Current Gain hFE1 V CE =5V, IC =100mA 100 400 hFE2 V CE =5V, IC =10mA 90 Turn-on Time t ON See specified Test circuit 50 ns Storage Time t STG See specified Test circuit 1000 ns Fall Time t F See specified Test circuit 60 ns Gain-Bandwidth Product f T V CE =5V, IC =50mA 120 MHz CLASSIFICATION OF hFE1 RANK R S T RANGE 100 ~ 200 140 ~ 280 200 ~ 400
2SC3648 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 o f 5 www.unisonic.com.tw Q W - R 2 0 8 - 0 3 8 . D SWITCHING TIME TEST CIRCUIT PW=20µS DC≤1% IB1 RB IB2VR 50Ω 100µF -5V INPUT 20IB1= -20IB2=IC=300mA 470µF 100V 333Ω
2SC3648 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 4 o f 5 www.unisonic.com.tw Q W - R 2 0 8 - 0 3 8 . D TYPICAL CHARACTERISTICS Collector Current, Ic (mA) Collector Current, Ic (mA) Collector Current, Ic (mA) DC Current Gain, hFE Collector-to-Emitter Saturation Voltage, VCE (sat) (V) Output Capacitance, Cob (pF)
2SC3648 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 5 o f 5 www.unisonic.com.tw Q W - R 2 0 8 - 0 3 8 . D TYPICAL CHARACTERISTICS(Cont.) Gain-Bandwidth Product, fT (MHz) Collector Current, IC (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.