2SC3647-R

2SC3647 LUGUANG

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 3

Technical content

■ Features

• High breakdown voltage and large current capacity.
• Complementar y to 2SA1417 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 2 Peak Collector Current ICM 3 Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 120 Collector- emitter breakdown voltage VCEO Ic= 1 mA，RBE= ∞ 100 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 6 Collector-base cut-off current ICBO VCB= 100 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 4V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=1A, IB=100mA 0.13 0.4 Base - emitter saturation voltage VBE(sat) IC=1A, IB=100mA 0.85 1.2 DC current gain hFE VCE= 5V, IC= 100mA 100 400 Turn-ON Time ton 80 Storage Time tstg 1000 Fall Time tf 50 Collector output capacitance Cob VCB= 10V,f=1MHz 16 pF Transition frequency fT VCE= 10V, IC= 100mA 120 MHz V uA V See sepcified Test Circuit. ns ■ Classification of hfe Type 2SC3647-R 2SC3647-S 2SC3647-T Range 100-200 140-280 200-400 Marking CCR CCS CCT http://www.lgesem i.com mail:lge@lgesemi.comRevision:20170701-P1

t i u c r i C t s e T e m i T g n i h c t i w S VR RB VCC=50VVBE= --5V + +50Ω INPUT OUTPUT RL 100µF 470µF PW=20µs IB1 D.C.≤1% IB2 10IB1= --10IB2=IC=0.7A For PNP, the polarity is reversed. ■ Typical Characterisitics IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A 2 41 530 0.4 0.8 1.2 1.6 2.0 2SC3647 IB=0mA 20mA 30mA 50mA 40mA 10mA 5mA 3mA 2mA 1mA 0.2 0.6 0.4 0.8 1.0 10 20 30 40 500 2SC3647 IB=0mA 0.5mA 2.5mA 3.0mA 3.5mA 4.0mA 2.0mA 1.5mA 1.0mA IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A 4.5mA 5.0mA 0.8 0.4 1.2 1.6 2.4 2.0 100 1000 5 77 3 20.01 0.1 5 7 3 32 21.0 2SC3647 VCE=5V 2SC3647 VCE=5V --25 Ta=75 --25°C 25°C Ta=75°C hFE -- IC IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Collector Current, IC -- A DC Current Gain, hFE 2SC3647 NPN Transistors http://www.lgesem i.com mail:lge@lgesemi.comRevision:20170701-P1

■ Typical Characterisitics 20.01 5 77 3 0.1 2 5 7 3 2 31.0 100 21.0 5 7 2237 10 5 73 100 100 2SA1417 2SC3647 2SC3647 VCE=10V 2SC3647 1MHz Cob -- VCB Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF For PNP minus sign is omitted.For PNP minus sign is omitted. fT -- IC Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz 1.0 7 0.01 0.15 7 3 2 1.05 7 3 32 2 2SC3647 IC / IB=10 25°CTa= --25°C 75°C 20.01 0.15 77 3 2 1.05 7 3 2 3 100 1000 2SC3647 IC / IB=10 --25°C 25°CTc=75°C VBE(sat) -- IC VCE(sat) -- IC Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV 0.01 0.1 1.0 7 1.05 3 22 7 105 3 2 7 1005 ICP=3A IC=2A 1ms 10ms 100 ms DC operation 2SC3647 A S O For PNP minus sign is omitted. Ta=25°C Single pulse Mounted on a ceramic board (250mm 2• 0.8mm) Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A 0.2 0.4 0.5 0.6 0.8 1.8 1.6 1.4 1.5 1.2 1.0 0 0 1 0 80 2 0 60 0 6 10 4 140120 2SC3647 PC -- Ta Mounted on a ceramic board (250mm 2•0.8mm) Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W Infinite heat sink 2SC3647 NPN Transistors http://www.lgesem i.com mail:lge@lgesemi.comRevision:20170701-P1