2SC3647_09 UTC

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  • Manufacturer or author: Provided By digicamel.com
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UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 NPN SILICON TRANSISTOR w w w . u n i s o n i c . c o m . t w 1 of 5 Copyright © 2009 Unisonic Technologies Co., Ltd QW-R208-039,C HIGH-VOLTAGE SWITCHING

APPLICATIONS

„ FEATURES * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high – density, small-sized hybrid ICs SOT-89 Lead-free: 2SC3647L Halogen-free: 2SC3647G „ ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Plating Halogen Free Package 1 2 3 Packing 2SC3647L-x-AB3-R 2SC3647G-x-AB3-R SOT-89 B C E Tape Reel

2SC3647 N P N S I L I C O N T R A N S I S T O R UNISONIC TECHNOLOGIES CO., LTD 2 of 5 5 www.unisonic.com.tw QW-R208-039,C „ ABSOLUATE MAXIUM RATINGS (Ta = 25°C) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage V CBO 120 V Collector to Emitter Voltage V CEO 100 V Emitter to Base Voltage V EBO 6 V Collector Current I C 2 A Collector Current (Pulse) I CP 3 A Collector Dissipation P C 500 mW Junction Temperature T J 150 °C Storage Temperature T STG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BV CBO I C = 10μA, IE =0 120 V Collector-Emitter Breakdown Voltage BV CEO I C = 1mA, RBE =∞ 100 V Emitter-Base Breakdown Voltage BV EBO I E = 10μA, IC=0 6 V Collector Cutoff Current ICBO V CB = 100V, IE =0 100 nA Emitter Cutoff Current I EBO V EB = 4V, IC =0 100 nA Collector-Emitter Saturation Voltage V CE(SAT) I C = 1A, IB = 100mA 0.13 0.4 V Base-Emitter Saturation Voltage V BE(SAT) I C = 1A, IB = 100mA 0.85 1.2 V Output Capacitance C ob V CB = 10V, f =1MHz 16 pF DC Current Gain h FE V CE = 5V, IC = 100mA 100 400 Turn-ON Time t ON See specified Test Circuit. 80 ns Storage Time t STG See specified Test Circuit. 1000 ns Fall Time t F See specified Test Circuit. 50 ns Gain-Bandwidth Product f T V CE = 10V, IC = 100mA 120 MHz ■ CLASSIFICATION OF h FE RANK R S T RANGE 100 ~ 200 140 ~ 280 200 ~ 400

2SC3647 N P N S I L I C O N T R A N S I S T O R UNISONIC TECHNOLOGIES CO., LTD 3 of 5 5 www.unisonic.com.tw QW-R208-039,C „ SWITCHING TIME TEST CIRCUIT PW=20µS DC≤1% IB1 RB IB2 50Ω 100µF -5V INPUT 10IB1= -10IB2=IC=0.7A 470µF 50V RL VR

2SC3647 N P N S I L I C O N T R A N S I S T O R UNISONIC TECHNOLOGIES CO., LTD 4 of 5 5 www.unisonic.com.tw QW-R208-039,C ■ TYPICAL CHARACTERICS 1.2 Base to Emitter Voltage, VBE (V) 0.4 0 0.4 1.0 2.4 1.6 0.8 0.2 0.8 1.2 IC -V BE VCE = 5V Collector Current, IC (A) 7 0.1 1.0 1000 100 hFE -I C 0.6 2.0 0.01 23 5 7 2 5 7 23 3 VCE = 5V Collector to Emitter Saturation Voltage, VCE (sat) (mV) Output Capacitance, cob (pF)

2SC3647 N P N S I L I C O N T R A N S I S T O R UNISONIC TECHNOLOGIES CO., LTD 5 of 5 5 www.unisonic.com.tw QW-R208-039,C ■ TYPICAL CHARACTERICS(Cont.) 0.01 Collector to Emitter Voltage, VCE (V) 7 10 100 1.0 0.1 A S O 1.0 35 35 2 2 ICP Collector Current, IC (A) 7 0.1 1.0 VBE (sat) -I C 0.01 23 5 7 2 5 7 2 3 IC/IB = 10 Ta = -25°C 25°C 75°C5 1.0 5 257 7 IC One Pulse - Ta = 25°C Mounted on ceramic board (250mm × 0.8mm) DC Operation 100ms 10ms 1ms 1.0Collector Dissipation, Pc (W) Ambient Temperature, Ta (°C) 0.2 0 60 140 1.8 1.2 0.6 20 100 160 PC -T a Infinite heat sink 1.6 0.8 0.4 12040 1.4