2SC3646-R

2SC3646_15 KEXIN

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 3

Technical content

www.kexin.com.cn 1 Transistors NPN Transistors 2SC3646 ■ Features

• High breakdown voltage and large current capacity.
• Fast switching speed.
• Complementary to 2SA1416 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 1 Peak Collector Current ICM 2 Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 120 Collector- emitter breakdown voltage VCEO Ic= 1 mA，RBE= ∞ 100 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 6 Collector-base cut-off current ICBO VCB= 100 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 4V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=400 mA, IB=40mA 0.1 0.4 Base - emitter saturation voltage VBE(sat) IC=400 mA, IB=40mA 0.85 1.2 DC current gain hFE VCE= 5V, IC= 100mA 100 400 Turn-ON Time ton 80 Storage Time tstg 850 Fall Time tf 50 Collector output capacitance Cob VCB= 10V,f=1MHz 8.5 pF Transition frequency fT VCE= 10V, IC= 100mA 120 MHz V uA V See sepcified Test Circuit. ns ■ Classification of hfe Type 2SC3646-R 2SC3646-R 2SC3646-T Range 100-200 140-280 200-400 Marking CBR CBS CBT

www.kexin.com.cn2 Transistors NPN Transistors 2SC3646 tiucriC tseT emiT gnihctiwS INPUT 50V 50Ω RL 100μF 470μF --5V IC=10IB1=--10IB2=400mA (For PNP, the polarity is reversed) + + VR PW=20μs D.C.≤1% RB IB1 IB2 ■ Typical Characterisitics IC -- VCE IC -- VCE Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- mA 2 41 530 0.2 0.4 0.6 0.8 1.0 100 300 200 400 500 0 10 20 30 40 500 2SC3646 2SC3646 IB=0mA IB=0mA 15mA 20mA30mA 25mA 10mA 5mA 3mA 2mA 1mA 0.5mA 2.5 mA 2.0mA 1.5mA 1.0mA hFE -- IC Collector Current, IC -- A DC Current Gain, hFE IC -- VBE Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- A 0.4 0.2 0.6 0.8 1.2 1.0 5 77 320.01 0.1 5 73 32 21.0 100 1000 2SC3646 VCE=5V 2SC3646 VCE=5V --25 Ta=75 --25°C 25°C Ta=75°C

www.kexin.com.cn 3 Transistors NPN Transistors 2SC3646 ■ Typical Characterisitics Cob -- VCB Collector-to-Base Voltage, VCB -- V Output Capacitance, Cob -- pF VCE(sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV VBE(sat) -- IC Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V 100 27 010.1 5 73 752 32 100 2 2SC3646 f=1MHz 1.010.0 5 7 2237 1.05 73 20.01 5 7 2237 0.1 5 73 1.0 1.0 100 1000 2SC3646 IC / IB=10 75°C25°C Ta=--25°C 2SC3646 IC / IB=10 --25°C25°C Ta=75°C For PNP, minus sign is omitted A S O Collector Current, IC -- A Collector-to-Emitter Voltage, VCE -- V 0.01 0.1 1.0 7 1.05 3 22 7 105 32 7 1005 1ms10ms100 msDC operation For PNP, minus sign is omitted 2SC3646 Single pulse Ta=25°C Mounted on a ceramic board (250mm2 0.8mm) ICP=2A IC=1A PC -- Ta Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C 0.2 0.5 0.4 0.6 0.8 1.6 1.3 1.4 1.2 1.0 00108020 60 06104 140120 Mounted on a ceramic board (250mm 0.8mm) No heat sink 2SC3646 fT -- IC Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz 100 7 1.010.0 5 732 1.05 732 2SC3646 2SC3646 VCE=10V For PNP, minus sign is omitted