2SC3646 LUGUANG
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- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
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Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Time High-Voltage Switching Applications 2SC3646 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage V CBO 120 V Collector-Emitter Voltage V CEO 100 V Emitter-Base Voltage V EBO Collector Current I C Collector Current (Pulse) I CP P C 500 mW P 1.3 W Jumction temperature T j 150 Storage temperature Range T stg - 5 5t o+ 1 5 0 * Mounted on ceramic board (250 mm x 0.8 mm) Collector Power Dissipation Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector Cut-off Current I CBO V CB = 100V , I E = 0 100 nA Emitter Cut-off Current I EBO V EB =4 V,I C = 0 100 nA Collector-Base Breakdown Voltage V (BR)CBO I C = 10uA , I E = 0 120 V Collector-Emitter Breakdown Voltage V (BR)CEO I C =1 m A,R BE 100 V Emitter-Base Breakdown Voltage V (BR)EBO I E = 10uA , I C =0 6 V DC Current Gain h FE V CE =5 V,I C = 100mA 100 400 Collector-Emitter Saturation Voltage V CE(sat) I C = 400mA , I B = 40mA 0.2 0.6 V Base-Emitter Saturation Voltage V BE(sat) I C = 400mA , I B = 40mA 0.85 1.2 V Gain-Bandwidth Product f T V CE = 10V , I C = 100mA 120 MHz Collector Output Capacitance C ob V CB = 10V , I E = 0 , f = 1MHz 13 pF Turn-On Time t on Storage Time t stg 700 Fall Time t f nsSee Test Circuit. http://www.lgesemi .com mail:lge@lgesemi.comRevision:20170701-P1
Electrical Characteristics Curves Test Circuit h FE Classification Marking Rank R S T h FE 100 200 140 280 200 400 CB High-Voltage Switching Applications 2SC3646 http://www.lgesemi .com mail:lge@lgesemi.comRevision:20170701-P1
High-Voltage Switching Applications 2SC3646 http://www.lgesemi .com mail:lge@lgesemi.comRevision:20170701-P1