2SC3646 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Time High-Voltage Switching Applications 2SC3646 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage V CBO 120 V Collector-Emitter Voltage V CEO 100 V Emitter-Base Voltage V EBO 6V Collector Current I C 1A Collector Current (Pulse) I CP 2A PC 500 mW PC* 1.3 W Jumction temperature T j 150 Storage temperature Range T stg - 5 5t o+ 1 5 0 * Mounted on ceramic board (250 mm2 x 0.8 mm) Collector Power Dissipation Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector Cut-off Current I CBO VCB = 100V , IE = 0 100 nA Emitter Cut-off Current I EBO VEB =4 V,I C = 0 100 nA Collector-Base Breakdown Voltage V (BR)CBO IC = 10uA , IE = 0 120 V Collector-Emitter Breakdown Voltage V (BR)CEO IC =1 m A,RBE = 100 V Emitter-Base Breakdown Voltage V (BR)EBO IE = 10uA , IC =0 6 V DC Current Gain h FE VCE =5 V,I C = 100mA 100 400 Collector-Emitter Saturation Voltage V CE(sat) IC = 400mA , IB = 40mA 0.2 0.6 V Base-Emitter Saturation Voltage V BE(sat) IC = 400mA , IB = 40mA 0.85 1.2 V Gain-Bandwidth Product f T VCE = 10V , IC = 100mA 120 MHz Collector Output Capacitance C ob VCB = 10V , IE = 0 , f = 1MHz 13 pF Turn-On Time t on 80 Storage Time t stg 700 Fall Time t f 40 nsSee Test Circuit.
www.kexin.com.cn2 SMD Type Transistors Electrical Characteristics Curves Test Circuit 2SC3646 hFE Classification Marking Rank R S T hFE 100 200 140 280 200 400 CB
www.kexin.com.cn 3 SMD Type Transistors 2SC3646