2SA1416 SANYO
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. Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity. . Fast switching time. . Very small size making it easy to provide high-density, small-sized hybrid Ics. ( ): 28A1416 Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Vopo (-)120 V Collector to Emitter Voltage Vopo {-)100 V Emitter to Base Voltage Vepo (-)6 V Collector Current Ic (~)1 0A Collector Current(Pulse) Top (-)2 0A Collector Dissipation Po 500 mW Mounted on ceramic board (250m? x0.én)1.3 W Junction Temperature Tj 150 % Storage Temperature Tstg -55 to +150 % Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Ip,9 Voge (-) 100V, T,=0 (-)100 nA Emitter Cutoff Current Iepo Vep=(-)AV,IQ=0 (-)100 nA DC Current Gain hep Voge(~)5V,1 =(-)100mA 100 4008 Gain-Bandwidth Product fy Vou=(=) 100, f¢=(~) 100mA 120 Maz Output Capacitance Cob Vope(-) 10V, f= 1MHz (13) pF : 8.5 pF C-E Saturation Voltage Von(sat) Tc=(~)400mA ,Tg=(-)40mA (-0.2)(-0.6) V 0.1 0.4 Vv B-E Saturation Voltage VpE(sat) Ip=(~)400mA,Iy=(-)40mA (-)0.85(-)1.2 Vv C-B Breakdown Voltage V(BR)cBO Ip=(-) 10pA , T,=0 (-)120 Vv C-E Breakdown Voltage VBR) CEO Ig=(-) 1mA , Rpp=oo (=)100 v E-B Breakdown Voltage V(BR)EBO Tye(-) 10pA, 2g=0 (-)6 Vv *:The 28A1416/2SC3646 are classified by 100mA hpp as follows: 100 R 200] 140 S 280 | 200 T 400 Continued on next page. Marking 2SA1416:AB 28C3646:CB Package Dimensions 2038 bpg rank :R,S,T (unit: mm) fea ad $e ( ts] tt 3 50. 1 Cry E: Emitt B: Base (Bottom View) SANYO: PCP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 3277TKI/N255MW,TS No.2005=1/4
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. a <5 3For PNP, minus sign is onites NY — 3 0.4) st Sing Sa - & — 228a1416/28C3646 A 3 La. LY . J, gone Pulse-Tas25°c [TN] doz — Ne, S O-0Mounted on ceramic board | 3 rt ttt RR Ye 3 2500m x 0. 8am: t— ° [SS 10.2 3 5 710 35-100 0 20 40 60 60 100 120 140 160 Collector to Emitter Voltage,Vog - V Ambient Temperature,Ta - °C | No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. WM Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® ‘Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD. its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. M@ Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is acourate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No. 2005-4/4