2SC3642 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor 2SC3642
DESCRIPTION
- LowCollectorSaturationVoltage
- High breakdown voltage and high reliability
- Fastswitchingspeed
- WideASO
- NPNtriple diffused planarsilicon transistor
- 100% avalanche tested
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- Ultrahighdeflection display
- Horizontaldeflection outputapplication ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 1200 V VCEO Collector-EmitterVoltage 800 V VEBO Emitter-BaseVoltage 7 V IC CollectorCurrent-Continuous 6 A ICM CollectorCurrent-Pulse 12 A IB BaseCurrent-Continuous 2 A PC CollectorPowerDissipation @TC=25℃ 100 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor 2SC3642 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=100mA;IB=0 800 V VCE(sat) Collector-EmitterSaturationVoltage IC=4A;IB=0.8A 5.0 V VBE(sat) Base-EmitterSaturationVoltage IC=4A;IB=0.8A 1.5 V ICBO CollectorCutoffCurrent VCB=1000V;IE=0 10 μA IEBO EmitterCutoffCurrent VEB=7V;IC=0 10 μA hFE- DCCurrentGain IC=0.8A;VCE=5V 8