2SC3636 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3636
DESCRIPTION
- With TO-3PN package
- High voltage ,high speed
- High reliability
APPLICATIONS
- Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7 A ICM Collector current-peak 14 A PC Collector power dissipation T C=25 80 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3PN) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3636 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=100mA ; IB=0 500 V VCEsat Collector-emitter saturation voltage I C=4A ;IB=0.8A 2.0 V VBEsat Base-emitter saturation voltage I C=4A ;IB=0.8A 1.5 V ICBO Collector cut-off current V CB=500V; IE=0 10 µA ICES Collector cut-off current V CE=900V; RBE=0 0.5 mA IEBO Emitter cut-off current V EB=5V; IC=0 1.0 mA hFE DC current gain I C=0.8A ; VCE=5V 8 Switching times ts Storage time 3.0 µs tf Fall time VCC=200V;IC=4A; IB1=0.8A; IB2=-1.6A 0.1 0.2 µs
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3636 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3636