2SC3619 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3619 DESCRIPTION ·
- With TO-126 package
- High voltage
- Small collector output capacitance
APPLICATIONS
- High voltage switching and amplifier
- Color TV horizontal driver applications
- Color TV chroma output applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector- emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 0.1 A IB Base current 50 mA PC Collector power dissipation TC=25℃ 1.5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55～+150 ℃
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3619 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector cutoff current V CB=240V;IE=0 0.1 μA IEBO Emitter cutoff current V EB=7V;IC=0 0.1 μA VCEsat Collector-emitter saturation voltage I C=10mA ;IB=1mA 1 V VBEsat Base-emitter saturation voltage I C=10mA ;IB=1mA 1 V hFE-1 DC current gain I C=4mA ; VCE=10V 20 hFE-2 DC current gain I C=20mA ; VCE=10V 30 200 COb Output capacitance I E=0; VCB=20V;f=1MHz 3 pF fT Transition frequency I C=20mA ; VCE=10V, 50 MHz
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3619 PACKAGE OUTLINE Fig.2 Outline dimensions
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3619