2SC3606 TOSHIBA

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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm e Low Noise Figure, High Gain. 25703 e@ = =NF=1.1dB, |Sgie=114B (f=1GHz) 1s20i8 re Se} MAXIMUM RATINGS (Ta = 25°C) 7 qi *y CHARACTERISTIC SYMBOL unrr |] 3} 2 J _| i Collector-Base Voltage VcBo = EH Collector-Emitter Voltage VCEO Emitter-Base Voltage Vepo | 3 | V_ | 3| -3| Collector Power Dissipation [ Po | _'150_—«|:s mw ‘| - Storage Temperature Range —55~125 1. BASE 2. EMITTER Marking 3. COLLECTOR aoa Tost Fh — — TOSHIBA 2-3F1A Weight : 0.012g MICROWAVE CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC | SYMBOL TEST CONDITION Transition Frequency Vop=10V, I¢=20mA | 5{ 7] — | Gk: | Insertion Gai [Sa1e? @) [VoR=10V, Ic=20mA, f=500MHz | — | 165| — | asertion Sain Saicl?@) [Vop=10V, I¢=20mA, f=1GHz —«| 75/ il — | Noise Fi NF(1)_[Vop=10V, Io=5mA, f=500MHz | — [| 1] — | oise Bigure NFQ)_ [Vcon=10V, Ic=5mA, f=1GHz [— fail 2] ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [aaw. | rye. [aax. [unr] Collector Cut-off Current IcBO VoB=10V, In=0 f— [— | 1] pA] Emitier Cut-off Current | Igpo | VEB=1V, Ig=0 b= f= [1] 2a DC Current Gain VoR=10V, Ig=20mA | 30 | — | 250) pF | Collecter Output Capacitance Vcp=10V, In=0, [| — [ 10] — | pF Reverse Transfer Capacitance f=1MHz (Note) [| — | 0.7] 1.15] (Note) Cre is measured by 3 terminal method with Capacitance Bridge. 261001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due, to theit inherent electrical sensitivity and vulnerability to physica stress itis the responsibilty of the buyer, when utlizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook © The information contained herein is presented only asa. guide, for the applications of our products. No responsibility is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 8998-10-28 15

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