2SC3528 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3528
DESCRIPTION
- Low Collector Saturation Voltage
- High Collector Current
- Good Linearity of h FE
APPLICATIONS
- Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 20 A IB B Base Current-Continuous 6 A Collector Power Dissipation @ TC=25℃ 125 PC Collector Power Dissipation @ Ta=25℃ 3 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3528
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A ; L= 25mH 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 2A 1.5 V ICBO Collector Cutoff Current VCB= 500V ; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 100 μA hFE-1 DC Current Gain IC= 2A ; VCE= 5V 15 hFE-2 DC Current Gain IC= 10A ; VCE= 5V 10 fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V; f= 1MHz 15 MHz Switching times ton Turn-On Time 1.0 μs tstg Storage Time 2.5 μs tf Fall Time IC= 10A; IB1= 2.0A, IB2= -2.0A; VCC= 125V 1.0 μs isc Website：www.iscsemi.cn 2