2SC3528 SAVANTIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3528

DESCRIPTION

  • With TO-3 package
  • High collector current
  • Low saturation voltage

APPLICATIONS

  • For high voltatge ,high speed power switching applications PINNING(see Fig.2) PIN DESCRIPTION

1 Base

2 Emitter

3 Collector

ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 20 A ICP Collector current-peak 30 A IB Base current 6 A TC=25 125 PC Collector power dissipation Ta=25 3 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3) and symbol

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3528 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=0.5A ;L=25mH 400 V VCE(sat) Collector-emitter saturation voltage I C=10A; IB=2A 1.0 V VBE(sat) Base-emitter saturation voltage I C=10A; IB=2A 1.5 V ICBO Collector cut-off current V CB=500V; IE=0 0.1 mA IEBO Emitter cut-off current V EB=7V; IC=0 0.1 mA hFE-1 DC current gain I C=2A ; VCE=5V 15 hFE-2 DC current gain I C=10A ; VCE=5V 10 fT Transition frequency I C=1A ; VCE=10V;f=1.0MHz 15 MHz Switching times ton Turn-on time 1.0 µs ts Storage time 2.5 µs tf Fall time IC=10A; IB1=-IB2=2.0A VCC=125V 1.0 µs

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3528 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm)