2SC3527 ISC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3527

DESCRIPTION

  • Low Collector Saturation Voltage
  • High Collector Current
  • Good Linearity of h FE

APPLICATIONS

  • Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 25 A IB B Base Current-Continuous 6 A Collector Power Dissipation @ TC=25℃ 100 PC Collector Power Dissipation @ Ta=25℃ 3 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3527

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A; L= 25mH 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.4A B 1.5 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 100 μA hFE-1 DC Current Gain IC= 2A; VCE= 5V 15 hFE-2 DC Current Gain IC= 7A; VCE= 5V 10 fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V; f= 1MHz 15 MHz Switching times ton Turn-On Time 1.0 μs tstg Storage Time 2.5 μs tf Fall Time IC= 7A; IB1= 1.4A, IB2= -1.4A; VCC= 125V 1.0 μs isc Website：www.iscsemi.cn 2