Download PDF2SC3526H PANASONIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
1Publication date: February 2003 SJC00133BED 2SC3526H Silicon NPN epitaxial planar type For display video output ■ Features
- High transition frequency f T
- Small collector output capacitance (Common base, input open cir- cuited) Cob
- Wide current range ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO 110 V Collector-emitter voltage V CER 100 V (Resistor between B and E) Collector-emitter voltage (Base open) V CEO 50 V Emitter-base voltage (Collector open) V EBO 3.5 V Collector current I C 150 mA Peak collector current I CP 300 mA Collector power dissipation P C 1W Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V CBO IC = 100 µA, IE = 0 110 V Collector-emitter voltage (Resistor VCER IC = 500 µA, RBE = 470 Ω 100 V between B and E) Collector-emitter voltage (Base open) V CEO IC = 1 mA, IB = 05 0 V Emitter-base voltage (Collector open) V EBO IE = 100 µA, IC = 0 3.5 V Collector-emitter cutoff current (Base open) ICEO VCE = 35 V, IB = 01 0 µA Forward current transfer ratio h FE VCE = 5 V, IC = 100 mA 20 Collector-emitter saturation voltage V CE(sat) IC = 150 mA, IB = 15 mA 0.5 V Transition frequency f T1 VCB = 10 V, IE = −10 mA, f = 200 MHz 300 MHz fT2 VCB = 10 V, IE = −110 mA, f = 200 MHz 350 Collector output capacitance C ob VCB = 30 V, IE = 0, f = 1 MHz 3 pF (Common base, input open circuited) ■ Electrical Characteristics Ta = 25°C ± 3°C Unit: mm Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 1: Emitter 2: Collector 3: Base EIAJ: SC-51 5.9±0.2 0.7±0.1 4.9±0.2 8.6±0.2 0.7+0.3 –0.2 13.5±0.5 2.54±0.15(3.2) (1.27)(1.27) 0.45+0.2 –0.1 0.45+0.2 –0.1 13 2
2 SJC00133BED
VCE(sat) IC hFE IC fT IE PC Ta IC VCE IC VBE Cob VCB 0 160 40 120 80 1.6 1.2 0.4 0.8 Collector power dissipation PC (W) Ambient temperature Ta (°C) 01 2 4821 0 6 240 160 120 200 Ta = 25°C IB = 5.0 mA 4.5 mA 4.0 mA 3.5 mA 3.0 mA 2.5 mA 2.0 mA 1.5 mA 1.0 mA 0.5 mA Collector current IC (mA) Collector-emitter voltage VCE (V) 120 100 VCE = 5 V Ta = 75°C −25°C 25°C Base-emitter voltage VBE (V) Collector current IC (mA) 1 10 100 1 000 0.01 0.1
100 IC / IB = 10
Ta = 75°C 25°C −25°C Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 0.1 1 10 100 120 100 VCE = 5 V Ta = 75°C 25°C −25°C Forward current transfer ratio hFE Collector current IC (mA) −1 −10 −100 −1 000 600 500 400 100 200 300 VCB = 10 V Ta = 25˚C Transition frequency fT (MHz) Emitter current IE (mA) 1 10 100 Collector-base voltage VCB (V) Collector output capacitance (Common base, input open circuited) Cob (pF) IE = 0 f = 1 MHz Ta = 25°C
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. It neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). Consult our sales staff in advance for information on the following applications:
- Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
- Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other- wise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.