2SC3515 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Features
High Voltage: VCBO = 300V , VCEO =3 0 0 V Low Saturation Voltage: VCE(sat) =0 . 5 V( m a x ) Small Collector Output Capacitance: Cob =3 p F ( t y p . ) PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package Complementary to 2SA1384 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage V CBO 300 V Collector-Emitter Voltage V CEO 300 V Emitter-Base Voltage V EBO 6V Collector Current I C 100 mA Base Current I B 20 mA PC 500 PC* 1000 Jumction temperature T j 150 Storage temperature Range T stg - 5 5t o+ 1 5 0 * mounted on a ceramic substrate (250 mm2 x 0.8 t) Collector Power Dissipation mW Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector Cut-off Current I CBO VCB = 300V , IE =0 0 . 1 ì A Emitter Cut-off Current I EBO VEB =6 V,I C =0 0 . 1 ì A Collector-base Breakdown Voltage V (BR)CBO IC =0 . 1 m A,IE = 0 300 V Collector-emitter Breakdown Voltage V (BR)CEO IC =1 m A,IB = 0 300 V DC Current Gain h FE VCE = 10V , IC = 20mA 30 150 Collector-Emitter Saturation Voltage V CE(sat) IC = 20mA , IB =2 m A 0 . 5 V Base-emitter Saturation Voltage V BE(sat) IC = 20mA , IB =2 m A 1 V Transition Frequency f T VCE = 10V , IC = 20mA 50 80 MHz Collector Output Capacitance C ob VCB = 20V , IE = 0 , f = 1MHz 3 4 pF
www.kexin.com.cn2 SMD Type Transistors Electrical Characteristics Curves 2SC3515 hFE Classification Marking Rank R O hFE 30 90 50 150 I
www.kexin.com.cn 3 SMD Type Transistors 2SC3515
www.kexin.com.cn4 2SC3515