2SC3515_04 TOSHIBA

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3515 HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications

  • High voltage: VCBO = 300 V, VCEO = 300 V
  • Low saturation voltage: VCE (sat) = 0.5 V (max)
  • Small collector output capacitance: Cob = 3 pF (typ.)
  • Complementary to 2SA1384
  • Small flat package
  • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO 300 V Collector-emitter voltage V CEO 300 V Emitter-base voltage V EBO 6 V Collector current I C 100 mA Base current I B 20 mA PC 500 Collector power dissipation PC (Note 1) 1000 mW Junction temperature T j 150 °C Storage temperature range T stg −55 to 150 °C Note 1: Mounted on a ceramic substrate (250 mm 2 × 0.8 mmt) Unit: mm PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.)

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I CBO VCB = 300 V, IE = 0 ― ― 0.1 µA Emitter cut-off current I EBO VEB = 6 V, IC = 0 ― ― 0.1 µA Collector-base breakdown voltage V (BR) CBO IC = 0.1 mA, IE = 0 300 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 1 mA, IB = 0 300 ― ― V hFE (1) (Note 2) VCE = 10 V, IC = 20 mA 30 ― 150 DC current gain hFE (2) VCE = 10 V, IC = 20 mA 20 ― ― Collector-emitter saturation voltage V CE (sat) IC = 20 mA, IB = 2 mA ― ― 0.5 V Base-emitter saturation voltage V BE (sat) IC = 20 mA, IB = 2 mA ― ― 1.0 V Transition frequency f T VCE = 10 V, IC = 20 mA 50 80 ― MHz Collector output capacitance C ob VCB = 20 V, IE = 0, f = 1 MHz ― 3 4 pF Note 2: h FE (1) classification R: 30 to 90, O: 50 to 150 Marking I Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator

Collector-emitter voltage V CE (V) IC – VCE (low voltage region) Collector current I C (mA) Collector-emitter voltage V CE (V) IC – VCE (low voltage region) Collector current I C (mA) Collector-emitter voltage V CE (V) IC – VCE (low voltage region) Collector-emitter voltage V CE (V) IC – VCE (low current region) Collector current I C (mA) Collector-emitter voltage V CE (V) IC – VCE (low current region) Collector current I C (mA) Collector-emitter voltage V CE (V) IC – VCE (low current region) Collector current I C (mA) Collector current I C (mA) 0 8 4 2 100 10 12 14 120 Common emitter Ta = 100°C IB = 0.1 mA 0.6 0.4 0.2 14 0 8 4 2 100 Common emitter Ta = 25°C IB = 0.1 mA 0.8 0.6 0.5 0.4 10 12 120 0.3 0.2 0 160 80 40 120 200 240 280 Common emitter Ta = 25°C IB = 10 µA 100 90 0 8 4 2 100 10 12 14 120 Common emitter Ta = −55°C IB = 0.1 mA 0.8 0.6 0.5 0.4 10 5 0.3 0.2 0 160 80 40 120 200 240 280 Common emitter Ta = 100°C IB = 10 µA 0 160 80 40 120 200 240 280 Common emitter Ta = −55°C IB = 10 µA 100

fT – IC Collector current I C ( m A ) hFE – IC DC current gain h FE Collector current I C (mA) hFE – IC DC current gain h FE Collector current I C ( m A ) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) ( V ) Collector current I C (mA) VBE (sat) – IC Base-emitter saturation voltage VBE (sat) ( V ) Collector current I C (mA) Transition frequency f T (MHz) Reverse voltage V R (V) Cib, Cob – VR Collector input capacitance C ib (pF) Collector output capacitance C ob (pF) 500 100 0.1 1 30 0.3 3 10 100 Common emitter Ta = 25°C VCE = 10 V 300 500 100 0.1 1 30 0.3 3 10 100 Common emitter VCE = 10 V 300 Ta = 100°C −55 0.1 0.3 1 30 0.3 0.1 Common emitter IC/IB = 10 0.05 3 10 0.5 Ta = 100°C −55 100 0.03 0.1 1 100 30 0.3 0.5 0.3 3 10 Ta = −55°C 100 Common emitter IC/IB = 10 0.1 0.3 3 10 1 30 500 100 Common emitter Ta = 25°C VCE = 20 V 300 0.1 10 1 0.3 100 30 100 300 300 Cib (IC = 0) Cob (IE = 0) f = 1 MHz Ta = 25°C

PC – Ta Collector power dissipation P C (W) Ambient temperature Ta (°C) Collector-emitter voltage V CE (V) Safe Operating Area Collector current I C (mA) 0 120 80 100 40 60 0.6 0.2 1.0 0.4 1.2 20 160 140 0.8 (1) (2) (1) Mounted on ceramic substrate (250 mm2 × 0.8 mmt) (2) No heat sink *: Single no repetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature T ested without a substrate. 1 100 10 3 0.3 500 300 100 300 0.5 1000 0.1 VCEO max 1 ms* 10 ms* IC max (pulse) IC max (continuous) DC operation Ta = 25°C 100 ms*

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  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
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