2SC3496 PANASONIC
Document overview
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Technical content
1Publication date: March 2003 SJD00104AED 2SC3496, 2SC3496A Silicon NPN triple diffusion planar type For power switching ■ Features
- High-speed switching
- High collector-base voltage (Emitter open) VCBO
- Satisfactory linearity of forward current transfer ratio h FE
- N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment ■ Absolute Maximum Ratings TC = 25°C ■ Electrical Characteristics TC = 25°C ± 3°C Unit: mm Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Parameter Symbol Rating Unit Collector-base voltage 2SC3496 V CBO 900 V (Emitter open) 2SC3496A 1 000 Collector-emitter voltage 2SC3496 V CES 900 V (E-B short) 2SC3496A 1 000 Collector-emitter voltage 2SC3496 V CEO 800 V (Base open) 2SC3496A 900 Emitter-base voltage (Collector open) V EBO 7V Base current I B 0.3 A Collector current I C 1A Peak collector current I CP 2A Collector power P C 30 W dissipation T a = 25°C 1.3 Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage 2SC3496 V CEO IC = 1 mA, IB = 0 800 V (Base open) 2SC3496A 900 Collector-base cutoff current 2SC3496 I CBO VCB = 900 V, IE = 05 0 µA (Emitter open) 2SC3496A V CB = 1 000 V, IE = 05 0 Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 05 0 µA Forward current transfer ratio h FE1 VCE = 5 V, IC = 0.05 A 6 hFE2 VCE = 5 V, IC = 0.5 A 3 Collector-emitter saturation voltage V CE(sat) IC = 0.2 A, IB = 0.04 A 1.5 V Base-emitter saturation voltage V BE(sat) IC = 0.2 A, IB = 0.04 A 1.0 V Transition frequency f T VCE = 10 V, IC = 0.05 A, f = 1 MHz 4 MHz Turn-on time t on IC = 0.2 A 1.0 µs Storage time t stg IB1 = 0.04 A, IB2 = − 0.08 A 3.0 µs Fall time t f VCC = 250 V 1.0 µs 8.5±0.2 3.4±0.3 1.0±0.1 0 to 0.4 6.0±0.2 0.8±0.1 R = 0.5 R = 0.5 1.0±0.1 0.4±0.1 (8.5) (6.5) (6.0) 1.3 (1.5) (7.6) 2.54±0.3 1.4±0.1 5.08±0.5 123 1.5±0.12.0±0.5 10.0±0.3 1.5+0 –0.4 3.0+0.4 –0.2 4.4±0.5 4.4±0.5 14.4±0.5 1: Base 2: Collector 3: Emitter Note) Self-supported type package is also prepared.
2SC3496, 2SC3496A
2 SJD00104AED
PC Ta IC VCE VCE(sat) IC VBE(sat) IC hFE IC fT IC ton , tstg , tf IC Safe operation area 0 160 40 120 80 Collector power dissipation PC (W) Ambient temperature Ta (°C) (1)TC=Ta (2)With a 50×50×2mm Al heat sink (3)Without heat sink (PC=1.3W) (1) (3) (2) 01 2 21 0 48 6 1.2 1.0 0.8 0.6 0.4 0.2 Collector current IC (A) Collector-emitter voltage VCE (V) TC=25˚C 90mA 80mA 70mA 60mA 50mA 40mA 30mA 20mA 10mA 100mA IB=200mA 0.01 0.1 1 0.01 0.1 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (A) IC/IB=5 –25˚C 25˚C TC=100˚C 0.01 0.01 0.1 0.1 1 Base-emitter saturation voltage VBE(sat) (V) Collector current IC (A) IC/IB=5 TC=–25˚C 25˚C 100˚C 0.01 10.1 0.1 100 Forward current transfer ratio hFE Collector current IC (A) VCE=5V TC=100˚C 25˚C –25˚C 0.001 0.01 0.1 1 0.1 100 1 000 Transition frequency fT (MHz) Collector current IC (A) VCE=10V f=1MHz T C=25˚C 0.01 0.1 100 Turn-on time ton , Storage time tstg , Fall time tf (µs) Collector current IC (A) Pulsed tw=1ms Duty cycle=1% IC/IB=5(2IB1=–IB2) VCC=250V TC=25˚C tstg tf ton 0.001 0.01 0.1 10 100 1 000 Collector current IC (A) Collector-emitter voltage VCE (V) Non repetitive pulse TC=25˚C ICP IC 2SC3496 2SC3496A t=10ms 300ms
2SC3496, 2SC3496A 3SJD00104AED Safe operation area (Reverse bias) Safe operation area (Reverse bias) measurement circuit Rth t L ICIB1 VIN tw −IB2 VCLAMP VCC T.U.T 0 1600400 1200800 Collector current IC (A) Collector-emitter voltage VCE (V) ICP IC L=100µH IC/IB=5 (2IB1=–IB2) TC=125˚C 10−4 10−3 10410310210110−110−2 10−2 10−1 102 Time t (s) Thermal resistance Rth (°C/W) (1)Without heat sink (2)With a 50×50×2mm Al heat sink (1) (2)
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